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Sumitomo Electric introduces SGM6901VU, a compact two-stage hybrid module SMD with 22 dB gain, 30 W power, ideal as driver or phased array radar element as well as the SGC0910-300A-R which is a 300 W IMFET. These add to the existing line of 50, 100 and 200 W IMFET devices.
Sumitomo Electric has added two GaN power amplifiers for X-Band radar applications. The F514 has a typical saturated output power of 350 W (>55 dBm) with 40 percent power-added efficiency and 10 dB power gain across 9.2 to 10.1 GHz. The F501 is a compact, surface-mount, hybrid module that can be used as the power amplifier (PA) in a phased array radar or as the driver for a higher power PA.
EMM5077VU - Power GaAs, C to Ka band power amplifier MMICs (Packages.) The EMM5077VU is a power amplifier MMIC that contains a two stage amplifier, internally matched, for standard communications band in 3.4 to 5.0 GHz frequency range. SEI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50 V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. 0.9 GHz
Sumitomo GaN-HEMT SGN1214-220H-R offers high power, high efficiency, ease of matching and greater consistency covering 1.2 to 1.4 GHz for L-band radar applications with 50 V operation. The low thermal resistance allows use of long pulse up to 5 msec pulse width with duty of 10%.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-Band amplifiers with 50 V operation, and gives you higher gain. This device targets applications that are driver stage and final stage of micro cell for base transceiver stations.
The SGK5867-30A is a high power GaN-HEMT that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. 5.85 to 6.75 GHz, C-Band internally matched GaN-HEMT.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50 V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. 0.9 GHz
Sumitomo GaN-HEMT SGN1214-220H-R offers high power, high efficiency, ease of matching and greater consistency covering 1.2 to 1.4 GHz for L-band radar applications with 50 V operation. The low thermal resistance allows use of long pulse up to 5 msec pulse width with duty of 10%.
SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-Band amplifiers with 50 V operation, and gives you higher gain. This device targets applications that are driver stage and final stage of micro cell for base transceiver stations.
The SGK5867-30A is a high power GaN-HEMT that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. 5.85 to 6.75 GHz, C-Band internally matched GaN-HEMT.