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Introduction to the BILT/IVCAD Pulsed IV, Pulsed S-Parameter and Compact Transistor Modeling system that allows characterization and modeling of GaN FETs
Maury Microwave , in conjunction with Anteverta-mw and NXP Semiconductors , has successfully characterized a NXP 8th generation LDMOS 320 W-rated base station transistor up to 500 W using the fully active MT2000 mixed-signal active load pull system (MSALP). This base station transistor was measured at 2.14 GHz, in...
