TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.
TriQuint Semiconductor Inc. has released two new cost-effective packaged RF power amplifiers that combine high output with high efficiency, gain and linearity. These solutions are excellent choices for use in Very Small Aperture Terminals (VSATs) and point-to-point as well as point-to-multipoint microwave applications.
TriQuint Semiconductor Inc. announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology.
TriQuint Semiconductor Inc. officially opened TriQuint International Pte Ltd., its new International Headquarters in Singapore. The facility will be the focal point for most international customers, suppliers and manufacturing partners.
At IMS 2011 in Baltimore, TriQuint Semiconductor Inc. , a leading RF solutions supplier and technology innovator, announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes...