Articles by Richardson RFPD Inc.

Richardson RFPD Inc. announces that, effective immediately, its domain name will change to richardsonrfpd.com. Richardson RFPD will host a standalone website, www.richardsonrfpd.com, to provide electronic design engineers and buyers with improved access and streamlined navigation to the latest new products from the industry’s leading suppliers of RF, Wireless and Energy technologies. Website visitors connecting to the old, shared rell.com website will now see a link to the new richardsonrfpd.com site.

Richardson RFPD Inc. announced it has completed a global distribution agreement with TRU Corp., a leader in the design, development and manufacture of custom, high performance RF/microwave interconnect solutions. TRU’s sophisticated, durable High Power cable assemblies provide power handling capabilities up to 6 times better than traditional RF assemblies.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of GPS modules featuring SiRFstarIV™ GPS technology from Maestro-Wireless Solutions (Maestro Wireless). These modules are offered in flash and ROM memory versions.

Richardson RFPD, Inc. announces immediate availability and full design support capabilities for three new RF Surface Acoustic Wave (SAW) filters from TriQuint Semiconductor, Inc. (TriQuint). The high performance filters are ideally-suited for wireless infrastructure applications, including 3G standards.

Richardson RFPD Inc. has announced availability and full design support capabilities for a group of high performance quadrature modulators and demodulators for operation at frequencies up to 2.4 GHz from Analog Devices Inc. (ADI). The devices offer a combination of performance, broadband operating frequency, and flexible device architecture.

Richardson RFPD Inc. announces availability and full design support capabilities for a 28-volt, 55 W, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G4005528-FS provides 55 W RF output power (P3 dB), with greater than 15 dB of linear gain, and better than 50% drain efficiency at 3.5 GHz.

Richardson RFPD Inc. announces availability and full design support capabilities for a 28-volt, 18 W, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G6001528-Q3 provides 18 W RF output power (P3 dB), with more than 10 dB linear gain, and >60% drain efficiency at 6.0 GHz.

Richardson RFPD, Inc. announces immediate availability of four new high-linearity driver amplifiers from TriQuint Semiconductor. These InGaP / GaAs HBT semiconductor devices deliver high performance across a broad range of frequencies.

Richardson RFPD, Inc. announces off-the-shelf availability for a complete set of key building-block RF amplifiers, each of which has been designed specifically for enhanced performance in demanding applications such as 3G/4G wireless communications systems. The product line is based on advanced semiconductor technologies, including InGaP HBT and Enhanced-Mode GaAs pHEMT (E-pHEMT).

Richardson RFPD Inc. announces availability and full design support capabilities for a series of Enhanced Performance SMA Connectors from Carlisle Interconnect Technologies. The EPSMA (Enhanced Performance) series provides mode free performance to 27 GHz. In addition, the connectors are tuned to provide ultra low VSWR to 27 GHz (typically 1.15:1).