Articles by Richardson RFPD Inc.

Direct Digital Synthesizer: AD9914

MK120442Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new direct digital synthesizer (DDS) featuring an internal, high speed, high performance, 12-bit digital-to-analog converter (DAC) from Analog Devices Inc. (ADI). The AD9914 is a complete high frequency synthesizer capable of generating a frequency-agile analog sinusoidal waveform (sine wave) at up to 1.4 GHz.


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High Power Amplifier: 1163/BBM2E3KLO

MK120435 (EMPOWER 1163

Richardson RFPD Inc. announces immediate availability of a new high power amplifier module from Empower RF Systems, Inc. (Empower). The 1163/BBM2E3KLO is a 20 to 520 MHz amplifier which is guaranteed to deliver 125 W output power and related RF performance under all specified temperature and environmental conditions.


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GaN - SiC High Electron Mobility Transistor: T1G6003028-FS

MK1204xxT1G6003028Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 30 W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor, Inc. (TriQuint). The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Liquid Cold Plate Heat Sinks

MK120416PriathermLiquidColdPlatesRichardson RFPD Inc. announces availability and full design services support for four new liquid cold plate heat sinks from PriaTherm. The four devices are light and compact, offer uniform cooling distribution under mounted power modules, and feature an aluminum alloy Al EN AW 6060 finish. Their brazed design protects against leaks.


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GaN on SiC SPDT Switches: TGS2351-SM, 2352, 2353

MK120414 TriQuint 3 new GaN SwitchesRichardson RFPD Inc. announces immediate availability and full design support capabilities for three single-pole, double-throw (SPDT) switches designed using the 0.25µm GaN on SiC production process from TriQuint Semiconductor, Inc. (TriQuint). The TGS2351-SM, TGS2352 and TGS2353  switches are ideally-suited for high power switching applications.


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Insulated-Gate Bipolar Transistors

Microsemi_1200V_NPT_IGBTs-01Richardson RFPD, Inc. announces availability and full design support capabilities for a new family of 1200 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). This new generation of IGBTs offers a dramatic reduction of twenty percent, or more, in total switching and conduction losses.


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