Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 30 W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor, Inc. (TriQuint). The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.