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Articles by Richardson RFPD Inc.

GaN - SiC High Electron Mobility Transistor: T1G6003028-FS

October 23, 2012

MK1204xxT1G6003028Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 30 W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor, Inc. (TriQuint). The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Liquid Cold Plate Heat Sinks

October 18, 2012

MK120416PriathermLiquidColdPlatesRichardson RFPD Inc. announces availability and full design services support for four new liquid cold plate heat sinks from PriaTherm. The four devices are light and compact, offer uniform cooling distribution under mounted power modules, and feature an aluminum alloy Al EN AW 6060 finish. Their brazed design protects against leaks.


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GaN on SiC SPDT Switches: TGS2351-SM, 2352, 2353

October 16, 2012

MK120414 TriQuint 3 new GaN SwitchesRichardson RFPD Inc. announces immediate availability and full design support capabilities for three single-pole, double-throw (SPDT) switches designed using the 0.25µm GaN on SiC production process from TriQuint Semiconductor, Inc. (TriQuint). The TGS2351-SM, TGS2352 and TGS2353  switches are ideally-suited for high power switching applications.


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Richardson RFPD introduces high linearity PA and two new dual-stage LNAs from Freescale

MMICs&More
October 15, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).


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Insulated-Gate Bipolar Transistors

October 9, 2012

Microsemi_1200V_NPT_IGBTs-01Richardson RFPD, Inc. announces availability and full design support capabilities for a new family of 1200 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). This new generation of IGBTs offers a dramatic reduction of twenty percent, or more, in total switching and conduction losses.


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Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

September 20, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).


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Richardson RFPD launches new website homepage

September 17, 2012

Richardson RFPD Inc. announced the launch of its redesigned website homepage. The refreshed homepage design offers more direct, one-click access to Richardson RFPD's extensive portfolio of products and industry-leading suppliers, best-in-class design support, and purchase options.


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DC Link Capacitors: K31 & K32 Series

September 12, 2012

MK120365Richardson RFPD, Inc. announces availability and full design support capabilities for new metalized polypropylene DC link capacitors from Kendeil™. The two series of devices, designated K31 and K32, are rated for voltages (VDC) ranging from 600 to 1300 V.


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Richardson RFPD surpasses 15M Fractus antennas shipped

September 11, 2012

Richardson RFPD Inc. announced that strong demand has propelled sales of Fractus, S.A. (Fractus) antennas to more than 15 million units shipped worldwide.


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Richardson RFPD announces TriQuint GaN Tech Hub

MMICs&More
August 27, 2012

TriQuint GaN Tech HubRichardson RFPD Inc. announced the launch of the TriQuint GaN Tech Hub, a micro-website featuring the latest news on gallium nitride (GaN) innovations and product releases from TriQuint Semiconductor, Inc.


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