Richardson RFPD Inc. introduces a pair of highly linear and efficient, fully-matched power amplifier modules designed for Picocell, Femtocell, and Customer Premises Equipment (CPE) applications from ANADIGICS Inc. Both devices are designed for WCDMA, HSDPA and LTE downlink air interfaces operating in the 2.11 to 2.17 GHz band.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale Semiconductor Inc. (Freescale).
Richardson RFPD Inc. announced the immediate availability of its 2012 Supplier Line Card. The updated, expanded Line Card features a section of 'Suppliers by Product Category' matrix tables that offers at-a-glance reference of supplier devices in the following categories:
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).
Richardson RFPD Inc. announces its attendance and participation at the 2012 IEEE International Microwave Symposium (IMS). IMS, along with the RFIC symposium and the ARFTG conference, is part of Microwave Week, the largest gathering of radio frequency (RF) and microwave professionals, and the most important forum for the latest and most advanced research in these fields.
Richardson RFPD, Inc. introduces a new 80 to 105 GHz balanced low noise amplifier (LNA) from United Monolithic Semiconductors S.A.S. (UMS). The CHA1008-99F is a broadband four-stage monolithic LNA designed for millimeter-wave imaging applications, and is also well-suited for commercial digital radios and wireless local area networks (LANs).
Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for the newest additions to the family of GaAs pHEMT digital phase shifters from M/A-COM Technology Solutions Inc. (M/A-COM Tech). The MAPS-010145 and MAPS-010165 are, respectively, 4 and 6-bit packaged devices that maintain low phase error and minimal attenuation variation over the full 360 degrees and 3.5-6 GHz frequency range.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.
Richardson RFPD Inc. announces availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz. The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications.