Richardson RFPD Inc. announces its attendance and participation at the 2013 International IEEE COMCAS. The annual conference provides a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the areas of microwaves, communications, antennas, solid state circuits, electromagnetic compatibility, electron devices, radar and electronic systems engineering.
Richardson RFPD Inc. announces immediate availability and full design support capabilities of the 400Z series of precision tolerance NPO RF and microwave capacitors from American Technical Ceramics Corp. (ATC). They offer best-in-class tolerances over a wide range of capacitance values, as well as low equivalent series resistance (ESR) and high series resonant frequency (FSR).
Richardson RFPD, Inc. introduces a new 50 V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi). The 0912GN-650V is internally-matched and capable of providing over 17 dB gain, 650 W of pulsed RF output power at 128 μs pulse width and 10% duty factor across the 960 to 1215 MHz band.
Richardson RFPD, Inc. announces immediate availability and full design support capabilities for a new absorptive, 50 Ω RF single-pole, double-throw (SPDT) switch from Peregrine Semiconductor Corporation (Peregrine). The PE42423 operates from 100 MHz to 6 GHz and features exceptionally high linearity that remains invariant across the full supply range.
Richardson RFPD, Inc. today announces availability and full thermal analysis support for an extensive inventory of extrusion profilesfrom Wakefield-Vette. Richardson RFPD’s offers immediate availability of raw material plus machining capabilities support prototype and pre-production quantity requirements for OEMs.