Articles by Hittite Microwave Corp

Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new wideband power amplifier module for use in microwave radio, VSAT, military & space, fiber optic and broadband test equipment applications from 100 MHz to 20 GHz.

Hittite Microwave offers the HMC614LP4E and the HMC714LP5E , the first single and dual integrated RMS power detectors capable of simultaneously measuring the instantaneous (RF envelope) power and true RMS power while providing a direct read of signal crest factor. Differential input sensing range is up to 72 dB to ±1 dB detection accuracy.

The HMC680LP4E is a high linearity, CMOS/ TTL compatible digitally controlled variable gain amplifier (DVGA) which operates from 30 to 400 MHz, and can be programmed to provide from -4 dB to 19 dB of gain, in 1 dB steps. The HMC680LP4E is housed in a 4x4 mm QFN leadless package and delivers noise figure of 5 dB in its maximum gain state.

Hittite has released the HMC720LC3C 1:2 Fanout Buffer, the HMC721LC3C XOR/XNOR gate, the HMC722LC3C AND/NAND/OR/NOR function, and the HMC723LC3C D-Type Flip Flop. These devices are designed to support data/clock rates up to 13 Gbps/13 GHz. The differential inputs to these devices are terminated with 50 Ohms to ground on chip, and may be either AC or DC coupled, while the differential outputs may be either AC or DC coupled.

The HMC614LP4E provides a "true RMS" representation of any RF/IF input signal and is ideally suited to wide bandwidth, wide dynamic range applications requiring repeatable power measurement over temperature; and especially where RF/IF waveshape and crest factor change with time.

The HMC616LP3E, HMC617LP3E and HMC618LP3E are GaAs pHEMT MMIC Low Noise Amplifiers which are rated from 175 to 660 MHz, 550 to 1200 MHz, and 1700 to 2200 MHz, respectively. These high linearity LNA MMICs deliver up to 24 dB gain and +37 dBm output IP3, with noise figure as low as 0.5 dB.

The HMC663LC3 is a general purpose, double-balanced mixer that is housed in a 3x3 mm ceramic SMT package and can be used as an upconverter or downconverter. Optimized balun structures allow the HMC663LC3 to provide up to 42 dB of LO to RF and LO to IF isolation, while conversion loss is specified at only 8 dB across the frequency range of 6 to 12 GHz.

The HMC451LP3E is a highly efficient, GaAs PHEMT MMIC medium power amplifier which operates from 5 to 18 GHz. The amplifier provides 18 dB of gain and +21 dBm of saturated output power at 18% PAE, while consuming only 120 mA from a +5 V supply.

The HMC637 is a GaAs pHEMT MMIC Power Amplifier chip which is rated from DC to 6 GHz, and delivers 14 dB gain, +30 dBm saturated output power, and +41 dBm output IP3. The HMC637 also delivers consistent output IP3 and excellent gain flatness of ±0.6 dB across its rated bandwidth.