J. Cheng, S. Li, B. Han and J. Gao, East China Normal UniversityShanghai, PR China; X. Yao, Semiconductor Manufacturing International Corp., Shanghai,

In the past ten years, an interest in more accurate characterization of RF MOSFETs has emerged. The rapid advancement of low-cost CMOS silicon process has made possible the application of CMOS technology at radio and microwave frequencies. When conducting S-parameter measurements of microwave devices directly on a wafer, the...