Articles by NXP Semiconductors N.V.

NXP Semiconductors N.V. announced the industry’s first medium power transistors in a 2 x 2 mm, 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) surface-mounted device (SMD) plastic package, the BC69PA transistor is the first in a family of medium power transistors from NXP...

In an awards ceremony held at IMS 2011, NXP Semiconductors N.V. announced the grand prize winner of its first-ever High Performance RF (HPRF) Design Challenge. After an intense final round of judging, "A 2-kW Amplifier for a Portable 449 MHz Spaced Antenna Wind Profiler Radar" by Brad Lindseth was...

NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60 MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The transistors were introduced during IMS...

NXP Semiconductors N.V. will demonstrate a component for a complete, mixed signal, base transceiver station (BTS) radio at IMS 2011 from Booth 420. The NXP BTS transceiver component demonstrator fully supports the demanding requirements of leading-edge wireless air interface standards, such as LTE Advanced, and showcases NXP’s new and...

NXP Semiconductors N.V. announced its intent to make its JenNet-IP ultra-low-power, IEEE 802.15.4-based wireless connectivity network layer software available under an Open Source license, as part of its vision to enable the “Internet of Things.” In recent years, interest in the Internet of Things – in which every device...

NXP Semiconductors N.V. and security specialist Giesecke & Devrient (G&D) announced the full validation of a joint software solution offering secure interfaces between the handset, NFC functionality and secure elements such as the SIM card. This solution enables NFC to be integrated securely into mobile handsets based on the...

NXP Semiconductors N.V. announced the availability of an ultra high frequency (UHF) RF power transistor; the BLF888A is a 600 W LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the...