Articles by NXP Semiconductors N.V.
May 21, 2013
NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.
November 2, 2012
Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.
November 1, 2012
NXP Semiconductors N.V. announced two 5V wideband IQ modulator devices that combine high dynamic range with fast on/off switching performance for use in radio frequency up-conversion. Operating between 400 MHz and 4 GHz, the BGX7100 and BGX7101consume less than 1 W power – 10-percent more efficient than other solutions on the market today.
November 21, 2011
NXP Semiconductors N.V. announced the industry’s first medium power transistors in a 2 x 2 mm, 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) surface-mounted device (SMD) plastic package, the BC69PA transistor is the first in a family of medium power transistors from NXP...Read More
June 20, 2011
In an awards ceremony held at IMS 2011, NXP Semiconductors N.V. announced the grand prize winner of its first-ever High Performance RF (HPRF) Design Challenge. After an intense final round of judging, "A 2-kW Amplifier for a Portable 449 MHz Spaced Antenna Wind Profiler Radar" by Brad Lindseth was...Read More
June 14, 2011
NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60 MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The transistors were introduced during IMS...Read More
May 19, 2011
NXP Semiconductors N.V. will demonstrate a component for a complete, mixed signal, base transceiver station (BTS) radio at IMS 2011 from Booth 420. The NXP BTS transceiver component demonstrator fully supports the demanding requirements of leading-edge wireless air interface standards, such as LTE Advanced, and showcases NXP’s new and...Read More
May 17, 2011
NXP Semiconductors N.V. announced its intent to make its JenNet-IP ultra-low-power, IEEE 802.15.4-based wireless connectivity network layer software available under an Open Source license, as part of its vision to enable the “Internet of Things.” In recent years, interest in the Internet of Things – in which every device...Read More
February 15, 2011
NXP Semiconductors N.V. and security specialist Giesecke & Devrient (G&D) announced the full validation of a joint software solution offering secure interfaces between the handset, NFC functionality and secure elements such as the SIM card. This solution enables NFC to be integrated securely into mobile handsets based on the...Read More
September 23, 2010
NXP Semiconductors N.V. announced the availability of an ultra high frequency (UHF) RF power transistor; the BLF888A is a 600 W LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the...Read More