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Integra Technologies offers GaN-on-SiC HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice.
IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems.
Integra Technologies is now offering an IFF avionics transistor with 120 W peak output power using GaN/SiC technology. The IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation.
Integra Technologiesis pleased to announce the formal launch of ultra-efficient RF Power Modules developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.
IGT5259CW25 is a RF power transistor, ideal for C-band, CW applications. Fully matched to 50-ohms, operating at the instantaneous frequency range of 5.2 to 5.9 GHz, and offers a minimum of 25 W of output power at 36 V drain bias.
IGNP1214M1KW-GPS is a single-supply 50-Ohm matched GaN-based pulsed power pallet amplifier for L-Band radar systems, operating in the 1.20 to 1.40 GHz instantaneous frequency band. The pallet amplifier supplies a minimum of 1000 W of peak pulsed output power.
IGT3135M135, a 50-Ohm matched high-power GaN HEMT transistor, that operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power.
IGNP0912L1KW is a 50-Ohm matched GaN-based high power pulsed pallet amplifier for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 to 1.215 GHz. This pallet amplifier supplies a minimum of 1000W of peak pulse power.
IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent.
The current trend in the growing S-band market demands wider bandwidths, higher power levels and wider pulses, which are best served with a new technology to satisfy these advanced requirements. AlGaN/GaN HEMT on silicon substrate technology is a viable alternative to traditional technologies for high power transistors used in...
