Articles by RFMW Ltd.

RFMW Ltd. announces design and sales support for the BLF2425M6LS180P, a 180 W LDMOS transistor from NXP covering the industrial, scientific and medical (ISM) band of 2400 to 2500 MHz. The BLF2425M6LS180P has applications from solid state heating to RF plasma lamps to RF plasma torches. The BLF2425M6LS180P offers 13.3 dB of gain and runs off a 28 V supply with efficiencies up to 53.5%.

RFMW Ltd. announces that Mark Millhollin has joined RFMW as a supplier business manager. Millhollin will be responsible for developing and implementing strategic business plans for various suppliers on the RFMW line card.

RFMW Ltd. announces that John Hamilton has been promoted to the position of vice president of marketing. Hamilton has served RFMW in sales, technical support, product management, marketing communications and technical marketing roles for the past 11 years.

RFMW Ltd. announces design and sales support foran LDMOS power transistor internally matched for broadband operation from 2400 to 2500 MHz. NXP’s BLF2425M7LS140 provides 140 W average CW power with 18.5 dB of gain. The BLF2425M7LS140 draws 1.3 A from a 28 V supply with efficiencies up to 52%. Housed in a ceramic package with solder ears, the BLF2425M7LS140 is a highly rugged transistor for industrial heating applications.

RFMW Ltd. announces design and sales support for the Iso-Attenuator model RFSL2536-A30 from RF Circulator Isolator Inc (RFCI).The RFSL2536-A30 is capable of handling 1000 W peak / 200 W average forward power and 100 W CW reverse power into the on-board, 30 dB attenuator. Spanning 1920 to 2125 MHz, the RFCI RFSL2536-A30 provides >23 dB typical port-to-port isolation while maximum insertion loss is 0.25 dB.

RFMW Ltd. announces design and sales support for a two-stage wideband power amplifier supporting Test Instrumentation, EW and Radar applications from 2 to 18 GHz. The Qorvo TGA2214 provides 5 W of saturated output power with a large signal gain of >14 dB. Small signal gain is >22 dB. Biased from a 22 V supply, the Qorvo TGA2214 draws 450 mA of current. PAE measures greater than 20 percent.

RFMW Ltd. announces design and sales support for NXP’s BLF25M612G LDMOS power transistor offering 12 W average CW output power. The BLF25M612G is designed as a driver amplifier for high power CW applications in the 2400 to 2500 MHz ISM band. Operating from a 28 V supply, efficiency of the BLF25M612G is rated at 58%. Offering a very high gain of 18 dB, this transistor touts excellent ruggedness and thermal stability.

RFMW Ltd. announces design and sales support for MiniRF’s low cost, 2-way splitter, model MRFSP0014. Covering the CATV bandwidth of 5 to 1002 MHz, the MRFSP0014 is designed for applications that require small, low cost and highly reliable surface mount components. Typical insertion loss is 0.5 dB with isolation of 30 dB. Amplitude balance measures 0.2 dB with phase balance of 1 degree.

RFMW Ltd. announces design and sales support for a high efficiency, GaN, 5 W, input-matched transistor covering the 5 GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7 W P3dB at 5.4 GHz. The transistor can be tuned for power, gain and efficiency. Linear gain is 12 dB. With wideband performance from 4 to 6 GHz, additional applications include telemetry, C-band radar, and instrumentation. Power added efficiency (PAE) at P3dB measures 53%.

RFMW Ltd. announces design and sales support for the TGA3504-SM, 2 to 30GHz Gain Block from TriQuint (Qorvo). The TGA3504-SM offers 8 dBm of output P1 dB with a corresponding small signal gain of up to 11.5 dB. Output third order intercept is >17 dBm. Wideband performance of the TGA3504-SM supports multiple applications such as Electronic Warfare (EW), military and commercial radar and military or commercial communication systems.