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Articles by RFMW Ltd.

LDMOS Transistor: BLF2425M7LS-250P

BLF2425M7LS-250PRFMW Ltd. announces design and sales support for NXP’s BLF2425M7LS-250P. This highly efficient (51% drain efficiency) LDMOS transistor is internally matched for broadband performance from 2400 to 2500 MHz, supporting ISM (industrial, scientific and medical) applications. Featuring 15 dB of gain, the NXP BLF2425M7LS-250P runs off a 28 V supply.


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2-Way Splitter: MRFSP5725

RFMW Ltd. announces design and sales support for a 5 to 1200 MHz passive, 2-way splitter from MiniRF. The MRFSP5725 provides a low cost, highly reliable solution for broadband CATV designs. Characterized for use in 75 ohm circuits, the MRFSP5725 offers 28 dB of isolation with typical insertion loss of only 0.5 dB. Lead free and RoHs compliant, the MRFSP5725 comes in a surface mountable 0.15  x  0.15  x  0.115" package.


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180 W LDMOS Transistor: BLF2425M6LS180P

BLF2425M6LS180PRFMW Ltd. announces design and sales support for the BLF2425M6LS180P, a 180 W LDMOS transistor from NXP covering the industrial, scientific and medical (ISM) band of 2400 to 2500 MHz. The BLF2425M6LS180P has applications from solid state heating to RF plasma lamps to RF plasma torches. The BLF2425M6LS180P offers 13.3 dB of gain and runs off a 28 V supply with efficiencies up to 53.5%.


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RFMW announces new VP of marketing

RFMW Ltd. announces that John Hamilton has been promoted to the position of vice president of marketing. Hamilton has served RFMW in sales, technical support, product management, marketing communications and technical marketing roles for the past 11 years.


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LDMOS Power Transistor: BLF2425M7LS140

BLF2425M7LS140RFMW Ltd. announces design and sales support foran LDMOS power transistor internally matched for broadband operation from 2400 to 2500 MHz. NXP’s BLF2425M7LS140 provides 140 W average CW power with 18.5 dB of gain. The BLF2425M7LS140 draws 1.3 A from a 28 V supply with efficiencies up to 52%. Housed in a ceramic package with solder ears, the BLF2425M7LS140 is a highly rugged transistor for industrial heating applications.


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Iso-Attenuator: RFSL2536-A30

RFSL2536-A30RFMW Ltd. announces design and sales support for the Iso-Attenuator model RFSL2536-A30 from RF Circulator Isolator Inc (RFCI).The RFSL2536-A30 is capable of handling 1000 W peak / 200 W average forward power and 100 W CW reverse power into the on-board, 30 dB attenuator. Spanning 1920 to 2125 MHz, the RFCI RFSL2536-A30 provides >23 dB typical port-to-port isolation while maximum insertion loss is 0.25 dB.


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Two-Stage Wideband Power Amplifier: TGA2214

TGA2214RFMW Ltd. announces design and sales support for a two-stage wideband power amplifier supporting Test Instrumentation, EW and Radar applications from 2 to 18 GHz. The Qorvo TGA2214 provides 5 W of saturated output power with a large signal gain of >14 dB. Small signal gain is >22 dB. Biased from a 22 V supply, the Qorvo TGA2214 draws 450 mA of current. PAE measures greater than 20 percent.


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12 W Transistor LDMOS Power: BLF25M612G

BLF25M612GRFMW Ltd. announces design and sales support for NXP’s BLF25M612G LDMOS power transistor offering 12 W average CW output power. The BLF25M612G is designed as a driver amplifier for high power CW applications in the 2400 to 2500 MHz ISM band. Operating from a 28 V supply, efficiency of the BLF25M612G is rated at 58%. Offering a very high gain of 18 dB, this transistor touts excellent ruggedness and thermal stability.


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