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Articles by RFMW Ltd.

Ten Surface Mount Circulators

ten surface mount circulatorsRFMW Ltd. announces design and sales support for ten new surface mount circulators from RFCI. Available at popular base station frequencies from 728 to 2690 MHz, these pin-style, surface mount circulators offer 500 W peak forward power handling and 80 to 100 W reverse power handling depending on package size.


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Voltage Controlled Attenuator: RFSA2013

RFSA2013RFMW Ltd. announces design and sales support for a temperature compensated voltage controlled attenuator. RFMD's RFSA2013 provides a linear attenuation slope versus control voltage with very little sensitivity to temperature changes. Built on SOI technology, linearity exceeds that of FET based designs. IIP3 linearity of the RFSA2013 is >50 dBm.


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SPDT Switch: PE42722

PE42722RFMW Ltd. announces design and sales support for a DOCSIS 3.1 compliant single-pole, double-throw (SPDT) switch from Peregrine Semiconductor. The PE42722 operates from 5 to 1794 MHz. Insertion loss is rated at 0.3 dB while offering up to 50 dB of isolation. Second harmonic performance is -119 dBc at 800 MHz with a 65 dBmV transmit input while the PE42722 third order performance is -138 dBc.


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Ku-Band SPDT Switch: TGS4310

TGS4310RFMW Ltd. announces design and sales support for a Ku-Band SPDT switch capable of handling 5 W RF power. The TriQuint TGS4310 offers >20 isolation with a low insertion loss of <1.7 dB. Designed for use by Ku-Band system providers, the TGS4310 supports radar, instrumentation and communication applications.


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GaN SPDT Switch: TGS2355-SM

TGS2355-SM and TGS2355RFMW Ltd. announces design and sales support for a 6 GHz GaN SPDT switch supporting commercial and military radar, communications, EW, and general purpose applications handling pulsed power levels up to 100 W. TGS2355-SM insertion loss is <1.1 dB yet typical isolation is >40 dB. Switching speed for the TGS2355-SM is in the order of 50 nS.


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RFMW releases high power 5 GHz WLAN power amps

 RFMW, Ltd. announces design and sales support for a pair of 5 GHz power amplifiers designed for 802.11a/n/ac WLAN applications. TriQuint’s TQP5523 and TQP5525are fully integrated modules with internal matching on both input and output ports.  


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GaN SPDT Switches: TGS2354-SM / TGS2354

TGS2354RFMW Ltd. announces design and sales support for a 6 GHz GaN SPDT switch supporting communications, EW, Radar and general purpose applications handling power levels up to 40 W.  The TGS2354-SM from TriQuint is packaged as a 4 x 4 mm QFN while the TGS2354 offers similar performance in DIE for hybrid applications. Switching speed for both is in the order of 50 nS.


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GaN Transistor: TGM3015-SM

TGM3015-SMRFMW Ltd. announces design and sales support for TriQuint’s TGM3015-SM, a 3 x 3 mm QFN packaged GaN transistor offering 10 W P3dB. Linear power gain is up to 17.1 dB within the 0.03 to 3.0 GHz bandwidth of this device. PAE3dB of the TGM3015-SM is >62% which typifies TriQuint GaN efficiency.


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Power Amplifiers: TQP5523 / TQP5525

TQP5525RFMW Ltd. announces design and sales support for a pair of 5 GHz power amplifiers designed for 802.11a/n/ac WLAN applications.  TriQuint’s TQP5523 and TQP5525 are fully integrated modules with internal matching on both input and output ports. Both TriQuint devices run off 3.3 or 5 V Vcc and integrate a temperature compensated bias network.


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SPDT High Isolation Switch: SKY13453-385LF

SKY13453-385LFRFMW  Ltd. announces design and sales support for Skyworks SKY13453-385LF, a single-pole, double-throw (SPDT), high isolation switch built using SOI technology. The SKY13453-385LF operates over a frequency range of 10 MHz to 6 GHz and can handle up to 2 W of RF input power. Offering high linearity of 57 dBm IP3 and low insertion loss of 0.4 dB, this switch serves T/R functions in applications from white space through dual-band WLAN.


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