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Articles by RFMW Ltd.

SP4T Switch: PE42441

PE42441RFMW, Ltd. announces design and sales support forPeregrine Semiconductors’ 10 MHz to 8 GHz SP4T switch. The PE42441 combines low insertion loss of 1 dB with high isolation of 39 dB (measured at 6 GHz). Internal 50 Ω terminations give this absorptive switch a P0.1 dB compression point of 31 dB, a significant competitive advantage for target applications in wireless infrastructure and wireless connectivity.


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BAW Filters: 885062 / 885071

885062-885071RFMW, Ltd. announces design and sales support for two BAW filters targeting applications where 2.4 GHz WLAN, Bluetooth and Wi-FI products must coexist with 4G LTE and TD-LTE signals. TriQuint’s 885062 and 885071 coexistence filters offer high rejection in adjacent LTE bands yet come in an industry-leading small package measuring 1.4x1.2x0.46 mm.


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RFMW offers 8GHz absorptive SP4T from Peregrine

RFMW Ltd. announces design and sales support for Peregrine Semiconductors' 10MHz to 8GHz SP4T switch. The PE42441 combines low insertion loss of 1dB with high isolation of 39dB (measured at 6GHz). Internal 50 ohm terminations give this absorptive switch a P0.1dB compression point of 31dB, a significant competitive advantage for target applications in wireless infrastructure and wireless connectivity.


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Two Power Transistors: T1G4020036-FL / T1G4020036-FS

T1G4020036-FLRFMW Ltd. announces design and sales support for two DC-3.5 GHz power transistors from TriQuint. Available in either a flanged or earless Gemini package as the T1G4020036-FL and T1G4020036-FS respectively, the devices provide two independent 120 W paths. Linear gain measures 16 dB at 2.9 GHz. A low thermal resistance base material supports applications in RADAR, communications and avionics.


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Triplexers : TPX978/1030/1090SA

TPX97810301090SARFMW Ltd. announces design and sales support for Sangshin Elecom triplexers targeting avionics applications for Automatic Dependent Surveillance-Broadcast (ADS-B),  Universal Access Transceiver (UAT) and Traffic Collision Avoidance System (TCAS). Sangshin’s TPX978/1030/1090SA  triplexer offers excellent isolation of 45 dB between each band along with only 2.5 dB of insertion loss. 


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GaN Amplifier: TGA2237

TGA2237RFMW Ltd. announces design and sales support for TriQuint’s 30 MHz to 2.5 GHz TGA2237 with >52% PAE. The TGA2237 offers 10 W saturated power with 13 dB of large signal gain. P1 dB is rated at >32 dBm with a small signal gain of 19 dB. TriQuint’s TGA2237 operates from a 30 V supply and uses only 360 mA of current.


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GaN Power Amplifier: TGA2576-2-FL

TGA2576-2-FLRFMW Ltd. announces design and sales support forthe TGA2576-2-FL from TriQuint. This 2.5 to 6 GHz GaN power amplifier provides 40 W of saturated output power with power added efficiency (PAE) of 36%. Suitable for EW, Radar, test instrumentation, communications systems or as an EMC amplifier, the TriQuint TGA2576-2-FL operates at 30 V and 1.55 A from its bias supply.


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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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GaN LNA: TGA2612

TGA2612RFMW Ltd. announces design and sales support for the TGA2612 from TriQuint. Optimized for performance from 6 to 12 GHz, the TGA2612 features >22 dB small signal gain with 20 dBm P1dB. Noise figure is <1.8 dB while OIP3 is an industry leading 29 dBm. To simplify system integration, the TriQuint TGA2612 is fully matched to 50 ohms with integrated DC blocking caps on both input and output ports.  


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