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Articles by RFMW Ltd.

Quarter Watt, Highly Efficient Power Amplifier: TQP9218

TQP9218RFMW Ltd. announces design and sales support for the Qorvo TQP9218, a quarter watt (24.5 dBm) and highly efficient power amplifier covering 1805 to 1880 MHz. ACLR at 24 dBm is -48 dBc. The TQP9218 is internally matched for ease of design and offers good linear performance without the need for linearization. Running from a nominal 4.5 V supply, the TQP9218 draws 240 mA and boasts 16% PAE while offering 31 dB of gain.


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UltraCMOS SPDT RF Switch: PE42723

PE42723RFMW Ltd. announces design and sales support for the PE42723 UltraCMOS SPDT RF switch from Peregrine Semiconductor. Achieving -121 dBc second harmonic and -140 dBc third harmonic at 17 MHz, the PE42723 exceeds the linearity requirements of the DOCSIS 3.1 cable industry standard and enables a dual upstream/downstream band architecture in cable customer premises equipment (CPE) devices spanning 5 to 1794 MHz.


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Bulk Acoustic Wave Filter: 885071-A

885071-ARFMW Ltd. announces design and sales support for an AEC-Q200 qualified bulk acoustic wave (BAW) filter designed for 2.4 GHz WLAN/WiFi/blue tooth coexistence with 4G LTE and TD-LTE signals. The Qorvo 885071-A offers high rejection in adjacent bands B7, B38, B40 and B41 allowing these various technologies to operate simultaneously and in close proximity. Qorvo’s 885071-A has a usable bandwidth of 100 MHz (2400 to 2500 MHz).


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10 W Power Amplifier: TGA2752-SM

TGA2752-SMRFMW Ltd. announces design and sales support for the Qorvo TGA2752-SM, QFN packaged 10 W power amplifier operating from 7.1 to 8.5 GHz. The TGA2752-SM provides 28 dB of gain and contains an integrated power detector. No external matching components are required, easing design in point to point amplifiers and C-band linear satellite communication systems.


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Two High Power PIN Diodes: SMP1331-085LF / SMP1331-087LF

SMP1331-085LFRFMW Ltd. announces design and sales support for two Skyworks Inc. high power, PIN diodes suitable for T/R and attenuator applications. The SMP1331-085LF (shunt connected) and SMP1331-087LF (series connected) diodes are capable of handling 50 W CW power in a shunt connected switch configuration. Large signal attenuator applications ranging from 10 MHz to beyond 6 GHz are also possible. 


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10 W GaN Power Amplifier: TGA2574

TGA2574RFMW Ltd. announces design and sales support for a 10 W GaN power amplifier providing broadband coverage from 6 to 18 GHz. The Qorvo TGA2574 boasts 20 dB of small signal gain and operates from a 28 V supply drawing 1.5 A. PAE is >15%. The Qorvo TGA2574 serves EW, radar and instrumentation markets and provides world-class power / PAE / gain versus bandwidth. 


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GaN Transistor: TGF3021-SM

TGF3021-SMRFMW Ltd. announces design and sales support for the Qorvo TGF3021-SM GaN transistor offering  over 30 W of P3 dB output power. Functioning from 30 MHz to 4 GHz, the TGF3021-SM is a discrete GaN on SiC HEMT supporting multiple high power applications such as LMR radio, commercial and military radar, RF jammers and test instrumentation. Capable of both CW and pulsed performance, typical PAE is 72.7%. 


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MMIC Amplifier: TGA2239-CP

TGA2239-CPRFMW Ltd. announces design and sales support for the Qorvo TGA2239-CP high power MMIC amplifier offering 35 W of saturated CW output power for Ku-band applications. The Qorvo TGA2239-CP operates from 13.4 to 15.5 GHz with power added efficiency of >34% and small signal gain of 25.5 dB. Processed using GaN on SiC technology, the TGA2239-CP draws 900 mA from a 22 V supply.


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Broadband GaN Amplifier: TGA2214-CP

TGA2214-CPRFMW Ltd. announces design and sales support for Qorvo’s TGA2214-CP, a broadband, 2 to 18 GHz GaN amplifier. Providing 4 W of saturated output power, the TGA2214-CP offers 22 dB of small signal gain and 13 dB of large signal gain. PAE is specified at >15% and the bias requirements are 22 V with 600 mA. The TGA2214-CP finds applications in EW, radar and test and measurement.


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LDMOS Power Transistor: BLF10M6200

AmpleonRFMW Ltd. announces design and sales support forAmpleon’s BLF10M6200, a 200 W LDMOS power transistor targeted for ISM applications from 700 to 1000 MHz. The BLF10M6200 offers 28.5% typical drain efficiency and is internally matched for ease of use. It is designed for ruggedness in class-AB operation and capable of withstanding a load mismatch of 10:1 through all phases.


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