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Articles by RFMW Ltd.

Amplifier Module: TGA2450-SM

TGA2450-smRFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s 2.5 W amplifier module for small cell applications. The TGA2450-SM provides 3 gain stages offering overall gain of 35 dB. The final stage integrates a Doherty design allowing peak power up to 18 W.


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Power Transistor: T1G6001032-SM

t1g6001032-smRFMW Ltd. announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10 W peak (P3 dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process.  Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology, the T1G6001032-SM is rated from DC to 6 GHz.


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GaN Power Amplifier: TGA2578

TGA2578RFMW  Ltd. announces design and sales support for TriQuint Semiconductor’s TGA2578, a 30 W GaN power amplifier covering 2 to 6 GHz. The TriQuint TGA2578 offers 27 dB small signal gain while maintaining 40% power added efficiency (PAE).


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GaN Transistors: T1G4012036-FL and FS

T1G4012036-FLRFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3 dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration. Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36 V supply.


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RFMW and Sunny Electronics announce distribution agreement

RFMW Ltd. and Sunny Electronics Corp. USA, a world leader in the manufacture of frequency control devices, announced a worldwide distribution agreement effective September 3, 2013.  Sunny Electronics offers the most comprehensive line of frequency control devices in the industry, supplying products from tuning fork to extremely high end-voltage/temperature controlled crystal oscillators. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.


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High Power Termination: SMT252503ALN2F

SMT252503ALN2FRFMW, Ltd. announces design and sales support for a small profile, high power termination from EMC Technology. The SMT252503ALN2F covers frequencies to 4GHz with VSWR < 1.2:1 (1.13:1 <2.7GHz). Employing an Aluminum Nitride substrate, the SMT252503ALN2F handles up to 150W. Alumina or Beryllium Oxide substrates are also available.


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GaAs/GaN Amplifier MMIC: TAT9988

TAT9988RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TAT9988, an ultra-linear GaAs/GaN amplifier MMIC intended for output stage amplification in CATV infrastructure applications. This 24V power doubler features 24dB gain at 1GHz. P1dB is 31dBm.


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