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Articles by RFMD
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has commenced high-volume production of multiple new power amplifiers (PAs) and power management integrated circuits (ICs) that incorporate RFMD's envelope tracking (ET) technology.
RF Micro Devices, Inc. announced it is shipping production volumes of its power amplification solutions that are compatible with Broadcom's 5 G WiFi chips. RFMD developed the RFFM82x5 (2.4 GHz) and RFFM85x5 (5 GHz) FEMs with Broadcom's 5 G WiFi chips, which are based on the IEEE 802.11ac standard. The combined solution delivers faster throughput and expanded range for an enhanced user experience.
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD’s newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150 to 5.850 GHz frequency band.
The RFSW1012 is a single-pole double-through (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the RFSW1012 makes it ideal for use in LTE, WCDMA, and CDMA applications.
The RFSW6124 is an SPDT RF switch featuring a symmetric design for exceptional isolation. Typical applications for this GaAs pHEMT switch include cellular base stations and other communications systems requiring high linearity and power-handling capability.
RFMD’s new RFFM8xxx series provide complete integrated solutions in single front end modules (FEMs) for WiFi systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.
The RFFC207xA and RFFC507xA series of parts are reconfigurable frequency conversion devices with an integrated fractional-N phased locked loop (PLL) synthesizer, voltage controlled oscillator (VCO), and one or two high linearity mixers. The fractional-N synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products.
RFMD’s new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. These high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design.
RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliability. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance.