Articles by RFMD

RFMD’s new RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.

RFMD’s new RFSA2514/2524 5-bit digital step attenuators (DSAs) feature high linearity over their entire gain control range with excellent step accuracy in 0.5dB (RFSA2514) or 1 dB (RFSA2524) steps. They are programmed via a serial mode control interface that is both 3 and 5 V compatible.

RFMD’s new RF5836 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.

RF Micro Devices, Inc. a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of three new power amplifiers for high-frequency point-to-point radio applications. RFMD's RFPA1002, RFPA1003, and RFPA1702 deliver >1 W RF output power in the 10 to 20GHz frequency bands and expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets.

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD's FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world's leading WiFi chipset providers.

RFMD’s new RFVA0016 is an integrated, analog-controlled, variable gain amplifier (VGA) for broadband applications with external matching, allowing operation in all bands from 400 to 2700 MHz with a single module. It features exceptional linearity, OIP3 > 40 dBm, and provides a >30 dB gain control range.

RFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

RFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.

RFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.