Articles by RFMD
October 14, 2009
RF Micro Devices Inc. (RFMD) announced that it has secured multiple high-volume design wins for its RF2815 GPS LNA module. The design wins are in support of multiple upcoming 3G smartphones and 3G data cards, and volume production is expected to commence in RFMD's December 2009 quarter, with a...
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October 7, 2009
RF Micro Devices Inc. (RFMD) announced the launch of a new online store offering new features and functionality that significantly enhance the e-commerce experience and streamline the selection and ordering of samples and volume shipments. The new online store is directly accessible via RFMD's home page at www.rfmd.com and...
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September 29, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance semiconductor components, announced that it has successfully demonstrated industry-leading reliability performance with its high-power Gallium Nitride (GaN) process technology. RFMD's GaN technology demonstrated MTTF = 30 million hours at a channel temperature of 200 degrees...
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August 24, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance semiconductor components, announced the company is engaged with two leading handset manufacturers and two leading baseband manufacturers in the development of fourth generation (4G) Long Term Evolution, or LTE, mobile broadband handsets. Specifically, RFMD is...
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August 10, 2009
RF Micro Devices Inc. (RFMD) announced it is supporting the ramp of Samsung 's Tocco Ultra Edition and GT-S8000 "Jet" 3G handsets with two of its industry-leading 3G cellular front ends - the RF3267 and RF6266. RFMD's high-efficiency and ultra-compact 3G front ends are designed to support the critical...
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June 22, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance semiconductor components, announced the company has formed a gallium nitride (GaN) Foundry Services business unit to supply high reliability, high performance and price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN...
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June 18, 2009
RF Micro Devices, Inc. , a leader in the design and manufacture of high-performance semiconductor components, introduced the RF5602 high-power, high-efficiency and high-linearity power amplifier (PA). The RF5602 is a 2 GHz linear PA designed for medium power applications including consumer premises equipment (CPE) and access point (AP) applications...
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June 17, 2009
RF Micro Devices, Inc. , a leader in the design and manufacture of high-performance semiconductor components, announced the addition of three new packaged broadband GaAs pHEMT high frequency amplifiers to RFMD's SUF family of products. The new amplifiers deliver exceptional broadband frequency performance and are applicable for commercial, military...
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June 15, 2009
RF Micro Devices Inc. , a leader in the design and manufacture of high-performance semiconductor components, today announced the expansion of the Company's WiFi product portfolio to include four new switch and switch/LNA products: the RF5500, RF5501, RF5510 and RF5511. The new family of front end solutions is designed...
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June 12, 2009
RF Micro Devices Inc. , a leader in the design and manufacture of high-performance semiconductor components, announced the expansion of the company's RF component portfolio to include four new high isolation broadband switches: the RF3021, RF3023, RF3024 and RF3025. Each of the symmetric RF switches is designed to operate...
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