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Articles by RFMD

RFMD Features Ember ZigBee Technology in High Performance FEMs

March 25, 2010
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it is teaming with Ember Corp. to introduce ZigBee® front-end modules (FEM) for smart grid applications that give utilities and consumers more control over how they monitor...
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RFMD Expands Family of Transmit Modules for 3G Entry Phones

February 26, 2010
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, announced the addition of four new products to RFMD's portfolio of 3G transmit modules. The four new products – the RF3230, RF3231, RF3232 and RF3171 – are...
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RFMD Secures US DoD Contract

February 23, 2010
RF Micro Devices (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it has been awarded $3.2 M in R&D contracts by the United States Department of Defense related to GaN microelectronics, including materials, device fabrication and high power...
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RFMD Ships Pre-production GaN-based CATV Hybrid Amplifiers

December 9, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it has commenced pre-production shipments of high-performance gallium nitride (GaN)-based CATV hybrid amplifiers to a major US-based cable television (CATV) equipment provider. Operators of hybrid fiber...
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RFMD Receives First GaN Product Purchase Order

November 19, 2009
RF Micro Devices Inc. (RFMD) announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180 W GaN broadband power transistor (BPT) and...
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RFMD Announces Major Gallium Nitride (GaN) Milestones

November 18, 2009
RF Micro Devices Inc. (RFMD®) announced that RFMD has qualified and released the RF3931, a 48 V, 30 W gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF...
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RFMD Receives First GaN Product Purchase Order

November 12, 2009
RF Micro Devices Inc. (RFMD®), a leader in the design and manufacture of high performance semiconductor components, announced RFMD has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order...
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RFMD Announces Major Gallium Nitride (GaN) Milestones

November 11, 2009
RF Micro Devices Inc. (RFMD®) announced that RFMD has qualified and released the RF3931, a 48 V, 30 W gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF...
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RFMD Releases "Green" GaN CATV Amplifier Module Portfolio

October 27, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency systems and solutions, released the industry's first "green" gallium nitride (GaN) based CATV amplifier modules. The D10040200PL1 and D10040230PL1 are designed for use as power doubler amplifiers in current and next generation...
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ZTE Selects RFMD to Support High Volume S305 Handset

October 22, 2009
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance semiconductor components, announced ZTE has selected two of RFMD's dual-band transmit modules to support ZTE's S305 GSM handset. The ZTE S305 is a stylish dual-band (GSM 900/1800 MHz or 850/1900 MHz) mobile handset designed for...
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