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Articles by Homayoun Ghani, Toshiba America Electronic Components Inc., Irvine, CA

Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices

Homayoun Ghani, Toshiba America Electronic Components Inc., Irvine, CA
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Major advances in microwave device development in recent years have enabled a transition to solid-state power amplifiers (SSPA) for wireless communications and radar systems in microwave to millimeter-wave bands. In particular, SSPAs are rapidly replacing electronic tube amplifiers, such as magnetron and traveling-wave tube-based amplifiers (TWTA), for base stations...
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