Kohei Fujii, John Stanback, and Henrik Morkner, Avago Technologies

Abstract An optical photo lithography based 0.15μm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for DC to 85GHz traveling...