Home » Authors » M.J. Poulton, K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury and D. Aichele, RF Micro Devices

M.J. Poulton, K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury and D. Aichele, RF Micro Devices

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Wideband 400 W Pulsed Power GaN Amplifier

A 400 W pulsed output power GaN HEMT amplifier operating over the 2.9 to 3.5 GHz band (17 percent bandwidth) has been developed. Under pulsed RF drive, with 10 percent duty cycle and 100 µs pulse width, the amplifier delivers an output power in the ran...

October 15, 2008

M.J. Poulton, K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury and D. Aichele, RF Micro Devices

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The high power and wide bandwidth potential of GaN HEMT devices is well known. 1 RFMD has been developing high power amplifiers using GaN HEMTs for various applications. A 250 W amplifier in the 2.14 to 2.5 GHz band for wireless infrastructure applications in the WCDMA and WiMAX bands...