HVVi Semiconductors Inc.

HVVi Semiconductors Inc. , a developer of silicon RF power transistors, announces the addition of the HVV1011-500 to its growing line-up of L-band devices. These devices are fabricated using the industry’s first High Voltage Vertical Field Effect Transistor (HVVFET™) architecture. HVV1011-500 is a 500 W (P1dB) single-ended device, and...

HVVi Semiconductors Inc. , a developer of silicon RF power transistors, announced the company’s first product using the revolutionary High Voltage Vertical Field Effect Transistor (HVVFET™) architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the HVV0405-175 offers UHF system designers a...

Radio Frequency (RF) power amplifiers play a critical role in a broad range of wireless applications, including infrastructure for mobile devices and cell phones, broadcasting and medical equipment, satellite and military communications, emergency radios, and radar. Increasing demands on overall system performance, in turn, translates into added pressure on...