Articles by Freescale Semiconductor, RF Division

RF laterally diffused MOS (LDMOS) is currently the dominant device technology used in high-power RF power amplifier (PA) applications for frequencies ranging from 1 MHz to greater than 3.5 GHz. This paper will include device and design considerations that specifically target enhancing ruggedness performance. The features of the products using this platform will also be presented.

Most applications requiring the generation of RF power depend on silicon and GaAs power transistors with typical outputs ranging from milliwatts to tens of watts. However, less visible but equally important are the wide array of industrial, scientific and medical applications that demand extremely high RF power levels to...