M. Ibrahim Khalil, Armin Liero, Andreas von Müller and Thomas Hoffmann

Microwave power transistors today can achieve output power levels greater than 100 W and there is more to come. In most cases, these transistors are also high voltage devices based on Si-LDMOS or GaN. In order to characterize such transistors during development, on-wafer measurements (of sub-cells) are an indispensable...