Home » Authors » Xiuping Li, Beijing University of Posts and Telecommunications, China, Jianjun Gao, Southeast University, Nanjing, China, Georg Boeck, Technische Univ

Xiuping Li, Beijing University of Posts and Telecommunications, China, Jianjun Gao, Southeast University, Nanjing, China, Georg Boeck, Technische Univ

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Microwave Noise Modeling for AlGaAs/InGaAs/GaAs PHEMTs

Analytical expressions for the noise parameters of microwave pseudomorphic high electron mobility transistors (PHEMT) are presented in this article. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which t...

December 12, 2006

Xiuping Li, Beijing University of Posts and Telecommunications, China, Jianjun Gao, Southeast University, Nanjing, China, Georg Boeck, Technische Univ

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Pseudomorphic high electron mobility transistors (PHEMT) have shown excellent microwave and noise performance and are very attractive for millimeter-wave and optoelectronic applications. The complete characterization of these devices, in terms of noise and scattering parameters, is necessary for computer-aided design (CAD) of monolithic microwave integrated circuits (MMIC) or optoelectronic...