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WIN Semiconductors has released an improved version of its 0.25 µm, 28 V GaN on SiC process, with 2 dB higher stable gain, increased power-added efficiency and fast switching time for discrete transistor and MMIC applications through 12 GHz.

MACOM announced the newest entry in its GaN-on-Si power transistor portfolio, designed for pulsed L-Band radar systems for airport surveillance radar.

Analog Devices, Inc. (ADI) introduced a 9 kHz to 7 GHz directional bridge and dual RMS RF power detector that simultaneously measures forward and reverse RMS power levels in a signal path, along with return loss.

Custom MMIC announced three new GaAs MMIC mixers for C-, X-, K and Ka-Band applications.

OMMIC introduces Europe’s first 6-inch GaN wafer production line, multiplying production capacity by 4x and enabling the mass production for the 5G and satellite communication markets.

Cree, Inc. announced that semiconductor industry veteran Gregg Lowe — former CEO of Freescale and 28-year veteran of TI — will be the company's new president and CEO. GaN supplier Wolfspeed will be part of Lowe's portfolio.

Broadcom Limited has announced the first dual frequency, mass market receiver for global navigation satellite systems (GNSS), designed to enhance location based services (LBS) for mobile phones, tablets and fitness wearables. The receiver is capable of centimeter accuracy while reducing power consumption by more than 50 percent.