Soitec, a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Shanghai Simgui Technology Co. Ltd., a Chinese silicon-based semiconductor materials company, have formed an international partnership to address both China's growing demand and limited worldwide production capacity for 200-mm silicon-on-insulator (SOI) wafers used in fabricating semiconductors for radio-frequency (RF) and power applications.
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.
Remcom announces a strategic partnership with AR Europe, a supplier of power amplifiers, antennas, and EMC testing equipment and support. The partnership will expose Remcom's electromagnetic simulation software and services to a broader audience and make its solutions more easily accessible to European customers.
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces shipment of the first RF switches built on the UltraCMOS 10 technology platform. With partner GLOBALFOUNDRIES, the company also announces the completion of product and process qualification for the advanced RF SOI technology.
Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, unveils new wide dynamic range broadband limiting amplifiers commonly used in electronic warfare, microwave receivers and broadband communications systems.
Richardson RFPD, Inc. announces immediate availability and full design support capabilities for a new 0.8W power amplifier from Wavelex.
The WPA0409A offers wide frequency band operation, from 470 MHz to 960 MHz, with 50 Ohm impedance, and features +29 dBm P1dB, 14 dB gain and +43 dBm IP3. It is versatile for a range of applications, including VHF, UHF, PA driver amplifiers, RF bench test, and fixed wireless communications.
Pasternack Enterprises Inc. released a new portfolio of L and S-Band high gain amplifiers covering 1.2 to 1.4 GHz and 3.1 to 3.5 GHz specifically used for commercial and military radar applications. These RF amplifiers utilize a hybrid microwave integrated circuit design and advanced GaAs PHEMT technology to produce an unconditionally stable module.