GaN power amplifiers are driving demand for increased power handling from supporting passive components, and Marki Microwave is responding with new high power bias tees and baluns. The new high power surface mount baluns (BALH-0003SMG and BALH-0006SMG) have a 37 dBm 1 dB compression point and improved 5 dB insertion loss (2 dB excess).
MicroGen Systems announced that vibration energy harvesting BOLT™ Power Cells enabled a live wireless sensor network (WSN) using Linear’s Dust Networks LTC5800-IPM SmartMesh™ IP mote-on-chip at the Sensors Expo and Conference exhibition in Rosemont, IL on June 5-6, 2013.
Nujira Ltd. has unveiled its newest Coolteq.L ET power supply modulator chip for LTE handsets. Nujira's NCT-L1300 delivers the best ET modulator performance on the market across all key metrics: system efficiency, noise, bandwidth, linearity and RF output power.
Texas Instruments Inc. (TI) introduced a family of 12-bit, 500- to 900-MSPS analog-to-digital converters (ADCs) that reduce board space by 80 percent while providing industry-leading signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
Northrop Grumman Corp. has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-Band communication applications. This product represents the first commercial availability of a packaged, GaN-based component from the company.
SemiGen Inc. , an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has announced that a series of microwave chip capacitors are now available from their RF Supply Center.