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RFIC Channel

RFMD introduces 500 W GaN L-Band amplifier

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.


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Skyworks introduces breakthrough low noise amplifiers at MTT-S 2013

Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a portfolio of low noise amplifiers (LNAs) that provide best-in-class noise figure, a critical component to boosting weak incoming signals for today’s 4G wireless infrastructure as well as diverse broad market systems including GPS, broadband, military and satellite communications.


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NXP achieves breakthrough noise figure performance with extreme broadband amplifiers

NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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