We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
pSemi announced the release of UltraCMOS® 13, the next-generation of its proprietary RFSOI process running on GlobalFoundries’ 300 mm wafer fab. UltraCMOS 13 was tailored to improve low noise amplifier (LNA) and power amplifier (PA) performance and enable improved performance from integrated front-end components.
ICONIC RF has announced two MMIC power amplifiers with high back-off efficiency, targeting 5G mmWave and satellite applications: a 5 W GaN on SiC covering 24 to 31 GHz and a 700 mW, 24 to 27 GHz GaAs Doherty amplifier.
Analog Devices, Inc. (ADI) introduced a new solution for mmWave 5G with the highest available level of integration to reduce design requirements and complexity in the next generation of cellular network infrastructure.
Qorvo said the export ban on Huawei is expected to reduce this quarter's revenue by some $50 million. For the most recent fiscal year, which ended March 30, Huawei contributed 15 percent of Qorvo's total revenue, approximately $469 million.
Catching up on the recent announcements from fabless RFIC start-up Altum RF: Joining Greg Baker, CEO, are cofounders Niels Kramer and Tony Fattorini. Based in Eindhoven, Kramer is the managing director for Europe and VP of marketing; Fattorini, based in Sydney, is VP of Engineering.
In an unexpected move, MACOM announced this morning that Stephen Daly has replaced John Croteau as president and CEO. Daly is a member of MACOM’s board and previously served as president, CEO and chairman of Hittite. MACOM did not disclose what prompted the change, saying only that Croteau resigned May 15 and will serve in an advisory role for the next two months, to assist with the leadership transition.
Ampleon has released the first of a family of LDMOS RF power devices based upon its Advanced Rugged Technology (ART), a derivative of its proven ninth-generation high voltage LDMOS process. ART was developed to enable extremely rugged transistors with operating voltages up to 65 V and high breakdown.
Cree plans to invest up to $1 billion to expand its SiC and GaN capacity, by building a state-of-the-art, automated 200 mm SiC fabrication facility and materials “mega factory” at its U.S. headquarters in Durham, North Carolina. To be completed in 2024, the expansion will increase the capacity of both Wolfspeed’s materials and wafer fabrication capacity by 30x.
As part of the French Nano 2022 public-private program, UMS and several French partners will develop “smart RF solutions,” new integration technologies for systems in package (SiP).
RSS
