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RFIC Channel

Advantech Wireless releases new Sapphire Series 2,500 W Ku-Band GaN SSPA/BUC

Advantech Wireless Inc., a global wireless solutions provider, for satellite, RF equipment, microwave troposcatter and point-to-point systems, announced the release of the new Sapphire Series 2,500W Ku-Band UltraLinear™ GaN SSPA/BUC, modular design with built in redundancy.


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MACOM introduces highest power GaN in plastic transistor

RFIC

MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.


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Peregrine offers industry’s broadest integrated RF tuning IC portfolio

Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), released four new DuNE™ Digitally Tunable Capacitors (DTCs), creating the industry’s broadest integrated RF tuning IC portfolio. The PE64906, PE64907, PE64908, and PE64909 DTCs feature a wide capacitance range of 0.6 – 7.7 pF and support power handling up to 34 dBm into 50 Ohms (30 Vpk RF).


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Custom MMIC's 4 to 8 GHz low noise amplifier offers 1.9 dB noise figure

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added a new low noise amplifier, the CMD185P3, to its expanding line of standard amplifier products.


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IQE and II-VI Inc. launch 150mm GaN HEMT epi wafers on SiC substrates

IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.


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50 V Telecom GaN Transistors

Efficiency Enhanced Amplifier Using a Digitally-Controlled Dynamic Bias Switching Circuit

10 W, 100 MHz to 20 GHz Amplifier

Richardson RFPD introduces 1200 V, 80 Milliohm SiC MOSFET from Cree

Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree). The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs.


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Hesse launches heavy wire and ribbon bonding services for product development

Hesse Mechatronics, Inc. (formerly Hesse & Knipps), leading manufacturer of high-speed fine pitch wedge bonders and fully automatic heavy wire and ribbon bonders for the backend semiconductor industry, announces that it will offer application development, prototyping and pre-production services on a newly installed BONDJET BJ939 Fully Automatic Heavy Wire Bonder.


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