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Ampleon launched a series of LDMOS RF power transistors fabricated with its Gen9HV 50 V LDMOS process.

Qorvo® announced a new family of 50 V GaN-on-SiC transistors that improve performance, increase functionality and accelerate development of mission-critical tactical and public safety radios.

Qorvo® is sampling what the company says is the industry’s first GaN on SiC front-end module (FEM) for the 39 GHz 5G band. The QPF4005 FEM integrates two identical, multi-function GaN MMICs into a footprint optimized for the phased array element spacing at 39 GHz. The FEM, which supports up to 256-QAM OFDM modulation, was designed for 5G base station architectures that use a phased array for beamforming.

Qorvo® expanded its CATV portfolio with five new products that improve upstream and downstream capabilities in customer premises equipment. The launch includes four DOCSIS 3.1 upstream amplifiers and a broadband digital step attenuator (DSA), which are sampling now.

Ampleon announced the Gen10 series of LDMOS RF power transistors that deliver a record efficiency of 52 percent and 18 dB of gain (at 1.8 GHz) in wireless infrastructure power amplifiers (PA).