Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.
M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, extended its strong industry position in diodes with a new family of broadband Shunt PIN diodes for high-power switching applications.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.
Advantech Wireless Inc., a global wireless solutions provider, for satellite, RF equipment, microwave troposcatter and point-to-point systems, announced the release of the new Sapphire Series 2,500W Ku-Band UltraLinear™ GaN SSPA/BUC, modular design with built in redundancy.
MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.
Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), released four new DuNE™ Digitally Tunable Capacitors (DTCs), creating the industry’s broadest integrated RF tuning IC portfolio. The PE64906, PE64907, PE64908, and PE64909 DTCs feature a wide capacitance range of 0.6 – 7.7 pF and support power handling up to 34 dBm into 50 Ohms (30 Vpk RF).
Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added a new low noise amplifier, the CMD185P3, to its expanding line of standard amplifier products.
IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.