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RFIC Channel

Skyworks introduces breakthrough low noise amplifiers at MTT-S 2013

Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a portfolio of low noise amplifiers (LNAs) that provide best-in-class noise figure, a critical component to boosting weak incoming signals for today’s 4G wireless infrastructure as well as diverse broad market systems including GPS, broadband, military and satellite communications.


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NXP achieves breakthrough noise figure performance with extreme broadband amplifiers

NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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Nitronex qualifies rugged NPT1015 transistor

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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