Arrow RF & Power, officially doing business as Richardson RFPD, announced the availability and full design support capabilities for a new high-performance Integer-N phase-locked loop (PLL) from Peregrine Semiconductor Corp.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), announces the introduction of the CMD204C3, a DC to 20 GHz single-pole, single-throw (SPST) MMIC switch. Also available in die form (CMD204), the CMD204C3 is the latest control device added by Custom MMIC to its growing library of standard products.
Comtech Telecommunications Corp. announced that, in April 2014, its Santa Clara, California-based subsidiary, Comtech Xicom Technology, Inc., received an order from an existing customer valued at $5.3 million for state-of-the-art 500W Ka-band high-power amplifiers to be used in the High Throughput Satellite (HTS) market.
Guerrilla RF, Inc., a leading provider of high performance MMICs, is pleased to announce the introduction of our first family of broadband, low noise amplifiers featuring Guerrilla Armor™, our patented and proprietary architecture for insuring high off-state isolation for the LNA under high RF input power level conditions.
Ethertronics, a leading technology company enabling innovative antenna and RF system solutions to deliver the best connected experience, unveiled EtherHelix GPS™, the world’s smallest, stand-alone, Right Hand Circularly Polarized (RHCP), external GPS antenna.
Soitec, a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Shanghai Simgui Technology Co. Ltd., a Chinese silicon-based semiconductor materials company, have formed an international partnership to address both China's growing demand and limited worldwide production capacity for 200-mm silicon-on-insulator (SOI) wafers used in fabricating semiconductors for radio-frequency (RF) and power applications.
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.