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RFIC Channel

Low loss, high isolation SPST switch covers DC to 20 GHz

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), announces the introduction of the CMD204C3, a DC to 20 GHz single-pole, single-throw (SPST) MMIC switch. Also available in die form (CMD204), the CMD204C3 is the latest control device added by Custom MMIC to its growing library of standard products.

 

 


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Comtech Telecommunications Corp. receives $5.3 Million order for Ka-band satellite power amplifiers

 Comtech Telecommunications Corp. announced that, in April 2014, its Santa Clara, California-based subsidiary, Comtech Xicom Technology, Inc., received an order from an existing customer valued at $5.3 million for state-of-the-art 500W Ka-band high-power amplifiers to be used in the High Throughput Satellite (HTS) market. 


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Soitec and Simgui announce major partnership to produce 200-mm SOI wafers in China

Soitec, a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Shanghai Simgui Technology Co. Ltd., a Chinese silicon-based semiconductor materials company, have formed an international partnership to address both China's growing demand and limited worldwide production capacity for 200-mm silicon-on-insulator (SOI) wafers used in fabricating semiconductors for radio-frequency (RF) and power applications.


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Element Six's GaN-on-diamond wafers proven by Raytheon to provide three times improvement in power density

Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.


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