Peregrine Semiconductor Corp. announces the UltraCMOS 10 platform, the newest advancement in Peregrine’s UltraCMOS technology. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design.
Empower RF Systems, a global leader in power amplifier solutions that are critical to defense, commercial, and industrial market applications, will be exhibiting at AOC in Washington, D.C. (Oct 28 – 30).
Leading RF GaN device manufacturers including Cree, MACOM, NXP and Freescale will discuss their GaN solutions in workshops and technical presentations to an audience of RF/microwave design engineers and system integrators.
Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.
Richardson RFPD Inc. announces availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi Corp. (Microsemi).
Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.