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The GNSS IC market is showing steady revenue growth in 2012, with the industry now setting its sights on the next major milestone: $3 Billion.

The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).  Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.

Vishay Intertechnology Inc. announced a new Power Metal Strip® battery shunt resistor featuring a molded enclosure with a four-pin connector. Providing easy PCB connection to the shunt resistor assembly, the WSBM8518 allows design engineers to focus on circuit development instead of PCB connection issues. 

Analog Devices Inc. introduced an FPGA mezzanine card (FMC) that incorporates JEDEC JESD204B SerDes (serializer/de-serializer) technology to allow digital and analog designers to simplify high-speed data converter-to-FPGA connectivity.

Leading RFIC front-end device manufacturers were on hand at the2012 Mobile World Congress, showing off the latest chip sets. To achieve smaller footprints and deliver on higher power added efficiency, vendors are offering different solutions which could shake up the industry.

Hittite Microwave Corp. has introduced a new single pole double throw (SPDT) switch and two new serial controlled 5-bit digital attenuator MMICs, which are ideal for automotive, microwave radio, test equipment, military and space applications up to 50 GHz.

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd. has selected Javelin’s JAV5501 Band I PA for new Galaxy smartphones.

Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.

TriQuint Semiconductor Inc. announced that it has begun work on Phase II of the Defense Advanced Research Projects Agency (DARPA) multi-year Nitride Electronic NeXt-Generation Technology (NEXT) program as a prime contractor.