- Buyers Guide
Cellular 4G/LTE Channel
Agilent Technologies Inc. announced it will demonstrate its newest LTE and WLAN test and measurement solutions, which cover the global technology and applications ecosystem for next-generation mobile broadband networks, at 4G World (Booth 322), McCormick Place West, in Chicago, Oct. 30-31.
Aeroflex Ltd. has added support for 4x2 multi-input multi-output (MIMO) to the 7100 Digital Radio Test Set for the R&D testing of LTE user equipment (UE) being designed with this feature.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).
The market for mobile handset IC, including platform and connectivity ICs, surpassed $32 billion in 2011 and is forecast to grow a further 11 percent in 2012 to reach $35.7 billion. Growth is being led largely by the smartphone segment, with ultra-low end handsets also growing strongly. “Qualcomm stands out as the market leader with 26 percent overall share in 2011,” stated Peter Cooney practice director, of semiconductors, “its continuing focus on the handset market and in particular its efforts to increase platform integration look set to further strengthen Qualcomm’s hold on the market in the near term.”
To cope with data traffic growth and expand its mobile coverage, Vivo has chosen Ericsson to supply and implement a 4G/LTE network in the North and Mid-Western regions of Brazil, as well as the states of São Paulo, Minas Gerais, Bahia and Sergipe.
The first models of Empower’s ‘Size Matters’ high power PA product family are packaged in a 5U, air cooled chassis and deliver over 1 kW of output power in the frequency ranges of 20 to 500 MHz, 500 to 1000 MHz and 20 to 1000 MHz.
Introduction to a new line of rugged connectors designed to withstand extreme conditions in harsh environments
Features test assemblies designed to improve vector network analyzer performance in applications where precision, stability and repeatability are key requirements
Discusses the present state-of-the-art in S-Band amplifier design for multi-kW SSPAs
Discusses how ICs built on a silicon-on-sapphire technology process with integrated power-management functions can enable smaller, low-power RF applications