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Semiconductors / Integrated Circuits

Two-tone vs. Single-tone Measurement of Second-order Nonlinearity

Use of a method to correctly locate the second-order intercept point (IP2) from one- and two-tone tests
Darioush Agahi, William Domino and Nooshin Vakilian
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Technical Feature Two-tone vs. Single-tone Measurement of Second-order Nonlinearity Darioush Agahi, William Domino and Nooshin Vakilian Conexant Systems Inc. Newport Beach, CA This article describes how to correctly find the second-order intercept point (IP2) from one- and two-tone tests, and presents measurement results in support of the theory. Relation...
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Fixing the Curtice FET Model

Method used to prevent convergence difficulties in the Curtice model when parameter extraction is imperfect
Steve Maas
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Technical Feature Fixing the Curtice FET Model Convergence difficulties are common in nonlinear analyses of circuits using a Curtice model. The problem is not the model itself, but the limitations of the parameters describing the gate I/V characteristic. In this article, we show why that failure occurs, and how...
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Simulating Multi-finger HBTS

Introduction to a new model of multi-finger heterojunction bipolar transistors used to analyze and predict current collapse, bias dependence and output power
Yu Zhu, Jason Gerber and Qian Cai
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Technical Feature Simulating Multi-finger Power HBTs A new model of multi-finger heterojunction bipolar transistors (HBT) is presented to analyze and predict current collapse, bias dependence and output power. The simulation of multi-finger HBTs has proven to be very challenging in both computer-aided design and electromagnetic (EM) simulation. However, by...
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The Importance of the Current-voltage Characteristics of FETs, HEMTs, and Bipolar Transistors in Contemporary Circuit Design

Description of the application in nonlinear circuit design of an instrument which measures the dynamic large-signal characteristics of FETs, PHEMTs and bipolar transistors
Peter Ladbrooke and James Bridge
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Tutorial The Importance of the Current-voltage Characteristics of FETs, HEMTs and Bipolar Transistors in Contemporary Circuit Design Peter Ladbrooke and James Bridge Accent Optical Technologies Bend, OR Traditionally, when applying computer-aided methods to the design and practical realization of nonlinear circuits, the active device models required for the circuit...
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A High Power Multi-carrier Power Amplifier

Description of a multi-carrier power amplifier designed to meet the air interface requirements associated with 2G, 2.5G and 3G basestation wireless systems
Celiant Corp.
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Product Feature A High Power Multi-carrier Power Amplifier Celiant™ Corp. Warren, NJ Power amplifiers are critical radio frequency components of wireless network systems, typically representing 10 to 40 percent of the cost of a basestation. There are a variety of wireless standards associated with 2G, 2.5G and 3G wireless...
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An X-band, High Power, MMIC-based Microwave Amplifier

Introduction to a new high power, MMIC-based microwave amplifier produced to supply 30 W of saturated output power between 8 and 11 GHz
MILMEGA Ltd.
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Product Feature An X-band, High Power, MMIC-based Microwave Amplifier Milmega Ltd. Isle of Wight, UK When established performance ranges are extended, it is often a simple case of developing and building on the original technology. Not so for the AS 80110/30 microwave amplifier, which has been produced to extend...
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Low Phase Noise SiGe Voltage-controlled Oscillators for Wireless Applications

Description of transmit and receive voltage-controlled oscillator design solutions developed in high performance SiGe technology
Xudong Wang, Dawn Wang, Chris Masse and Peter Bacon
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Technical Feature Low Phase Noise SiGe Voltage-controlled Oscillators for Wireless Applications A low phase noise voltage-controlled oscillator (VCO) is one of the critical circuits in modern telecommunications systems. In recent years, silicon germanium (SiGe) BiCMOS technology has become one of the most promising technologies for VCO designs. This article...
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A Varactor-tuned Oscillator with Linear Tuning Characteristics

Proposed design procedure for emphasizing the tuning linearity of a varacter-tuned oscillator
Munkyo Seo, Joo-Yeol Lee, Kyung-Kuk Lee and Sangwook Nam
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Technical Feature A Varactor-tuned Oscillator with Linear Tuning Characteristic Munkyo Seo, Joo-Yeol Lee and Kyung-Kuk Lee LG Electronics Inc. Seoul, Korea Sangwook Nam Seoul National University Seoul, Korea In certain areas of microwave applications such as FMCW radars, FM modulators and phase-locked loop (PLL) circuits, the system performance is...
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Designing a Bluetooth Transceiver in RF CMOS

Presentation of a design methodology used to facilitate the rapid prototyping and design of an RFIC
Bob Koupal, Marshall Wang and Cory Edelman
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Technical Feature Designing a Bluetooth Transceiver in RF CMOS Bob Koupal and Marshall Wang Signia Technologies Milpitas, CA Cory Edelman Agilent Technologies Westlake Village, CA The design of a 2.4 GHz Bluetooth transceiver RFIC in CMOS requires careful verification of key performance criteria at all stages of the design...
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A New Type of Amplitude Equalizer for In-band Flatness Improvement

Presentation of a cascade amplitude equalizer used for improving the performance of a bandpass filter frequency response in cellular band
Hee-Yong Hwang, Sang-Won Yun and Joong-Sung Chung
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Technical Feature A New Type of Amplitude Equalizer for In-band Flatness Improvement There is a growing need in modern communication systems for low cost bandpass filters of small size, high selectivity and flat passband response in order to meet the demands for inter-channel power balance, and to avoid interference....
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