Semiconductors / Integrated Circuits

2.5 V GaAs pHEMT Switches for GSM Handsets

A new line of 2.5 V GaAs pHEMT switches for GSM handsets is featured
Cover Feature 2.5 V GaAs pHEMT Switches for GSM Handsets M/A-COM Lowell, MA A new line of robust GaAs pHEMT switches for operation in 2.5 V GSM handsets has been developed. These switches feature performance that is unrivaled in the industry for harmonics at 2.5 V in addition to...
Read More

A CMOS-based Front-end Downconverter for GPS Applications

Description of a CMOS-based front-end downconverter used to downconvert incoming satellite signals from 1.575 GHz to an intermediate frequency of 1.023 MHz
Product Feature A CMOS-based Front-end Downconverter for GPS Applications Valence Semiconductor Irvine, CA The industry is striving for single-chip Global Positioning System (GPS) designs given the limited real estate available within cell phones, personal digital assistants (PDA) and other consumer electronic devices. Since GPS designs are typically comprised of...
Read More

SOI CMOS Technology For RF System-on-chip Applications

Overview of current advances in silicon-on-insulator (SOI) CMOS technology, including reduction in cross-talk between RF and digital circuits and integration of high quality passive elements
Technical Feature SOI CMOS Technology For RF System-on-chip Applications CMOS technology is one of the most promising choices for RF applications. Its highly integrated nature provides true RF system-on-chip integration. Silicon-on- insulator (SOI) CMOS offers specific additional design advantages that include a significant reduction in cross-talk between RF and...
Read More

Performing Transient Analysis on PLL Frequency Synthesizers

Use of system-level simulation tool with flexible behavorial modeling capability to simulate and enhance the performance of a wireless PLL circuit
Technical Feature Performing Transient Analysis on PLL Frequency Synthesizers A PLL can be considered a subsystem within a larger communications system, so it is appropriate to analyze this type of network with the help of a system-level simulator. The use of flexible behavioral models within the simulator allows only...
Read More

A Feedforward Power Amplifier with Loops to Reduce RX Band Noise and Intermodulation Distortion

Introduction to a new power amplifier developed to reduce amplified noise and intermodulation distortion signals using a feedforward technique
Technical Feature A Feedforward Power Amplifier with Loops to Reduce RX Band Noise and Intermodulation Distortion This article proposes a new power amplifier approach for the reduction of amplified noise signals in the receiver (RX) band as well as intermodulation distortion signals in the transmitter (TX) band using a...
Read More

Topics in Communication System Design: Carrier Triple Beats

Analysis of carrier triple beats that create third-order intermodulation interference when two or more carriers are present in one channel
Technical Feature Topics in Communication System Design: Carrier Triple Beats Howard Hausman Miteq Inc. Hauppauge, NY Intermodulation interference is typically calculated based on two signals present in the RF or IF bandwidth. When the bandwidth is less than an octave, even-order intermodulation products, such as second- and fourth-order intermodulation...
Read More

Stainless Steel Coaxial Cable with Medium Loss at 36 GHz

Development of a high performance stainless steel coaxial cable with medium loss at 36 GHz
Product Feature Stainless Steel Coaxial Cable with Medium Loss at 36 GHz Fig. 1 Loss per 100 ft. vs. frequency. Anyone who has tried to use copper cable for high frequency connections in high stress environments knows that it does not hold up very well for long. Attempts to...
Read More

A Broadband, Four-bit, Ka-band MMIC Phase Shifter

Introduction to the design, fabrication and measurement of a broadband, four-bit, GaAs phase shifter at Ka-band frequencies
Technical Feature A Broadband, Four-bit, Ka-band MMIC Phase Shifter A compact, robust and broadband, four-bit, Ka-band phase shifter was designed and fabricated in a standard 0.25 m m PHEMT GaAs process. Design trade-offs, simulation versus measured results and architectures for the various bits to achieve broadband performance are discussed....
Read More

A High Efficiency, Low Cost Silicon Bipolar GSM Dual-band PA Module

Presentation of the design and measurement data for a PA module using silicon RF-IC bipolar chip technology on a simple ceramic substrate
Technical Feature A High Efficiency, Low Cost Silicon Bipolar GSM Dual-band PA Module T. Johansson, P. Lundin, J. Engvall and D. Uggla Ericsson Microelectronics AB Kista, Sweden U. Hagström Ericsson Microwave Systems AB Mölndal, Sweden As the wireless communication business continues to expand, there is great demand for reducing...
Read More

Electronically Tunable Thin Film Filters for Microwave Applications

A new line of electronically tunable RF filters is featured
Cover Story Electronically Tunable Thin Film Filters for Microwave Applications Paratek Microwave Inc. Columbia, MD Interference in wireless systems increases bit error rate (BER) and decreases the reliability and quality of service of the communication network. Interference mitigation requires filtering of the transmitted and received energies to reject all...
Read More