Semiconductors / Integrated Circuits
Presentation of an n-channel MOS transistor model for the simulation of CMOS RF circuits in the gigahertz range
November 1, 2001
Technical Feature An Embedded MOS Model 9 for CMOS RF Circuit Design This article presents an n-channel MOS transistor model for the simulation of CMOS RF circuits in the gigahertz range. This model is based on a MOS model 9 (MM9) compact transistor model, embedded in a network describing...
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A set of accurate closed-form formulas for primary parameter matrices and even- and odd-mode impedances for coupled sliced coaxial cables
November 1, 2001
Technical Feature Rigorous Analytical Expressions for Electromagnetic Parameters of Transmission Lines: Coupled Sliced Coaxial Cable This article is a continuation of a previous article that appeared in Microwave Journal and is the first part in the development of accurate closed-form formulas for the primary parameters (inductance [L] and capacitance...
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Overview of the impact of sophisticated CAD software on today's analog design engineer
November 1, 2001
Special Report Circuit Designers: An Endangered Species? Ernest Rejman, Contributing Editor Back in the Jurassic Period, when the four-function calculator first made its appearance, some greeted it with dismay. "Suitable for imbeciles," spat an elder engineer of my acquaintance. "Now it won't be necessary to even know how to...
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Proposed simulation scheme to predict the frequency band location and hidden spurious harmonic modes in low pass corrugated waveguide filters
November 1, 2001
Technical Note Coping with Hidden Spurious Harmonic Modes in the Design of Low Pass Corrugated Waveguide Filters Hidden spurious harmonic modes in corrugated waveguide filters are investigated from both theoretical and practical points of view. It has been found that multiple mode couplings occurring at more than one place...
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Use of double oven-controlled crystal oscillators to improve thermal quality for highly precise frequency references
November 1, 2001
Application Note Application and Operation of a Double OCXO Timo Reinhardt FOQ Piezo Technik GmbH Bad Rappenau, Germany Central switching centers make up the junction of mobile and stationary communications. In order to handle increasing data flows, this operation is performed at ever-higher frequencies and data speeds, and the...
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Use of phase invariant attenuator to change the amplitude in the processing of a microwave signal with minimal impact to the phase characteristic
November 1, 2001
Product Feature Phase Invariant Attenuators G.T. Microwave Inc. Randolph, NJ The function of a phase invariant attenuator is to change the amplitude in the processing of a microwave signal with minimal impact to the phase characteristic. The theory of operation is that when a signal reaches its maximum attenuation,...
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Introduction to an automatic macro program used for the analysis of radio frequency MOSFETs
October 1, 2001
C.Y. Su, S.J. Chang, L.P. Chen, Y.P. Ho, G.W. Huang, D.C. Lin, B.M. Tseng, H.Y. Lee, J.F. Kuan, Y.M. Deng, K.A. Wen, C.Y. Chang
Technical Feature An Automatic Macro Program for Radio Frequency MOSFET Characteristics Analysis The parameter extraction language (PEL) in Agilent IC-CAP software is used to develop an automatic macro program for the analysis of the characteristics of RF MOSFETs. By using this powerful macro program, the time spent on the...
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Description of fractional-N synthesizers and the associated systems used to implement the technology in commercially available products
October 1, 2001
Technical Feature Fractional-N Synthesizers David Owen IFR Systems Inc. Wichita, KS Fig. 1 A basic fractional-N system with no jitter correction based on a single accumulator. Fractional-N synthesizers have been used for many years to improve the performance of indirect frequency synthesizers. A simple indirect synthesizer consists of a...
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Framework for analyzing and predicting the power spectral sidelobe regrowth from soft saturating amplification of data signals having small percentage carrier ripple
October 1, 2001
Technical Feature Regrowth of Data Spectral Sidelobes from AM/PM Effects and Hard Limiting Frank Amoroso Santa Ana, CA A previous article 1 set forth a framework for analyzing and predicting the power spectral sidelobe regrowth from soft saturating amplification of data signals having small percentage carrier ripple. The results...
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Presentation of the characteristics of a commercially available SiGe heterojunction bipolar transistor used in an oscillator operating at Ku-band
October 1, 2001
Technical Feature Design of a Low Phase Noise Ku-band Oscillator Using a SiGe HBT Myrianne Regis, Hugues Lafontaine and Steve Kovacic SiGe Semiconductor Ottawa, ON, Canada Gilles Cibiel and Olivier Llopis LAAS-CNRS Toulouse, France In the past decade, the demand for microwave, millimeter-wave and wireless communication systems has rapidly...
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