Semiconductors / Integrated Circuits

High Temperature, High Power RF Life Testing of GaN on SiC

White Paper from M/A-Com Technology Solutions, Presented by Richardson RFPD
As GaN power device technology matures and gains acceptance in the market place, suppliers who provide products using this promising technology must prove its reliability. This paper will provide an overview of the testing approaches used to establish failure rates and will provide a comparison of DC and RF based HTOL methods. The primary focus of this paper will be the high power RF HTOL test method used by M/A-COM Technology Solutions to qualify its new MAGX line of discrete GaN on SiC RF Power Transistors. An overview of the results and a comparison of the reliability of GaN with respect to older silicon based power semiconductor technologies will be discussed.
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New Low-Profile Hermetic LTCC Mixer Series Raises the Bar for Reliability, Performance, and Price

RichardsonRFPDA new family of ultra-reliable mixers, developed by Mini-Circuits, combines low-temperature cofired ceramic (LTCC) circuitry and specially selected semiconductor dice in a hermetically sealed case at 1/10th the price of comparable products on the market. Fully automated, tightly-controlled, and highly repeatable processes ensure excellent performance at temperatures up to 125 degrees C.
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Infineon and Fairchild expand power MOSFET partnership

Infineon Technologies and Fairchild Semiconductor have extended their compatibility partnership to encompass Infineon’s proprietary 5 x 6 power stage asymmetric dual MOSFET package. The PowerStage 5 x 6 is a leadless SMD package, which integrates the low-side and high-side MOSFET of a synchronous DC/DC converter into a 5 by 6 mm² package outline.


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