Semiconductors / Integrated Circuits

Infineon introduces MOS switching devices for space and avionics applications

Infineon Technologies has introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the BUY25CSXX family are claimed to offer best-in-class performance to support design of energy-efficient power conditioning and power supply systems for space use.


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High Temperature, High Power RF Life Testing of GaN on SiC

White Paper from M/A-Com Technology Solutions, Presented by Richardson RFPD
As GaN power device technology matures and gains acceptance in the market place, suppliers who provide products using this promising technology must prove its reliability. This paper will provide an overview of the testing approaches used to establish failure rates and will provide a comparison of DC and RF based HTOL methods. The primary focus of this paper will be the high power RF HTOL test method used by M/A-COM Technology Solutions to qualify its new MAGX line of discrete GaN on SiC RF Power Transistors. An overview of the results and a comparison of the reliability of GaN with respect to older silicon based power semiconductor technologies will be discussed.
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