M/A-COM Tech Solutions Extends Leadership in High Power Semiconductors With New Portfolio of GaN Products

M/A-COM Technology Solutions Inc. extends its leadership position in high power semiconductors with the introduction of a new family of Gallium Nitride (GaN) RF power transistors. This new family of products targets L- and S-band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and...
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Cree To Demonstrate C-Band GaN HEMT MMIC High Power Amplifier for Satellite Communications

Cree Inc. (Booth 1925) will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at IMS 2011 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers. "This is the first GaN MMIC...
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IMS Exhibitor Preview - Components

Components from ATC, Anatech, Ducommun, Minicircuits, NTC, Reactel, Richardson, Teledyne, UTE, Vectron and Werlatone
MTT-S IMS 2011 Exhibitor Preview: Components Suppliers View in Browser June 1, 2011 Components For more show coverage, visit: American Technical Ceramics Booth No. 1906 ATC's new 550L ultra-broadband capacitor (UBC) has been designed and manufactured with the highest quality materials to provide reliable and repeatable ultra-broadband performance...
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IMS 2011 The Largest and Most Prestigious IEEE Microwave Conference

The International Microwave Symposium (IMS) will be held June 5-10 at the Baltimore Convention Center. IMS2011 is the largest and most prestigious IEEE microwave conference in the world, bringing together international experts to showcase the most advanced research, development and innovation in RF, microwave, millimeter-wave and terahertz technologies. IMS2011...
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