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Amplifiers

Two-tone vs. Single-tone Measurement of Second-order Nonlinearity

Use of a method to correctly locate the second-order intercept point (IP2) from one- and two-tone tests
March 1, 2002
Technical Feature Two-tone vs. Single-tone Measurement of Second-order Nonlinearity Darioush Agahi, William Domino and Nooshin Vakilian Conexant Systems Inc. Newport Beach, CA This article describes how to correctly find the second-order intercept point (IP2) from one- and two-tone tests, and presents measurement results in support of the theory. Relation...
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A High Power Multi-carrier Power Amplifier

Description of a multi-carrier power amplifier designed to meet the air interface requirements associated with 2G, 2.5G and 3G basestation wireless systems
February 1, 2002
Product Feature A High Power Multi-carrier Power Amplifier Celiant™ Corp. Warren, NJ Power amplifiers are critical radio frequency components of wireless network systems, typically representing 10 to 40 percent of the cost of a basestation. There are a variety of wireless standards associated with 2G, 2.5G and 3G wireless...
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A High Gain Power Amplifier with Variable Bias for Multi-mode WCMDA Applications

A new high performance power amplifier for WCDMA applications is featured this month
February 1, 2002
Cover Feature A High Gain Power Amplifier with Variable Bias for Multi-mode WCMDA Applications RF Micro Devices Greensboro, NC This article describes a new high performance power amplifier (PA) for wideband code division multiple access (WCDMA) applications. With the transition from second generation (2G) systems, such as Global System...
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An X-band, High Power, MMIC-based Microwave Amplifier

Introduction to a new high power, MMIC-based microwave amplifier produced to supply 30 W of saturated output power between 8 and 11 GHz
February 1, 2002
Product Feature An X-band, High Power, MMIC-based Microwave Amplifier Milmega Ltd. Isle of Wight, UK When established performance ranges are extended, it is often a simple case of developing and building on the original technology. Not so for the AS 80110/30 microwave amplifier, which has been produced to extend...
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SOI CMOS Technology For RF System-on-chip Applications

Overview of current advances in silicon-on-insulator (SOI) CMOS technology, including reduction in cross-talk between RF and digital circuits and integration of high quality passive elements
January 1, 2002
Technical Feature SOI CMOS Technology For RF System-on-chip Applications CMOS technology is one of the most promising choices for RF applications. Its highly integrated nature provides true RF system-on-chip integration. Silicon-on- insulator (SOI) CMOS offers specific additional design advantages that include a significant reduction in cross-talk between RF and...
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A Feedforward Power Amplifier with Loops to Reduce RX Band Noise and Intermodulation Distortion

Introduction to a new power amplifier developed to reduce amplified noise and intermodulation distortion signals using a feedforward technique
January 1, 2002
Technical Feature A Feedforward Power Amplifier with Loops to Reduce RX Band Noise and Intermodulation Distortion This article proposes a new power amplifier approach for the reduction of amplified noise signals in the receiver (RX) band as well as intermodulation distortion signals in the transmitter (TX) band using a...
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Optimum Design for Linearity and Efficiency of a Microwave Doherty Amplifier Using a New Load Matching Technique

Presentation of a new design technique to match the complex load impedance of a Doherty amplifier for various power levels using offset transmission lines at the load modulation network
December 1, 2001
Technical Feature Optimum Design for Linearity and Efficiency of a Microwave Doherty Amplifier Using a New Load Matching Technique A Doherty amplifier with full load matching circuits of the carrier and peaking amplifiers at both low and high power levels is demonstrated for the first time. In the circuit...
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A High Efficiency, Low Cost Silicon Bipolar GSM Dual-band PA Module

Presentation of the design and measurement data for a PA module using silicon RF-IC bipolar chip technology on a simple ceramic substrate
December 1, 2001
Technical Feature A High Efficiency, Low Cost Silicon Bipolar GSM Dual-band PA Module T. Johansson, P. Lundin, J. Engvall and D. Uggla Ericsson Microelectronics AB Kista, Sweden U. Hagström Ericsson Microwave Systems AB Mölndal, Sweden As the wireless communication business continues to expand, there is great demand for reducing...
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An Ultra-linear 3G Power Amplifier

Development of an ultra-linear power amplifier that operates from 2110 to 2170 MHz and delivers 15 W of output power with 45 dB of gain
October 1, 2001
Product Feature An Ultra-linear 3G Power Amplifier Unity Wireless Systems Corp. Burnaby, B.C., Canada Fig. 1 The amplifier's typical intermodulation performance. Third Generation (3G) wireless is the next phase in wireless communications, defined by the migration to packet-switched networks at high speed data rates. 3G capability will be a...
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Regrowth of Data Spectral Sidelobes from AM/PM Effects and Hard Limiting

Framework for analyzing and predicting the power spectral sidelobe regrowth from soft saturating amplification of data signals having small percentage carrier ripple
October 1, 2001
Technical Feature Regrowth of Data Spectral Sidelobes from AM/PM Effects and Hard Limiting Frank Amoroso Santa Ana, CA A previous article 1 set forth a framework for analyzing and predicting the power spectral sidelobe regrowth from soft saturating amplification of data signals having small percentage carrier ripple. The results...
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