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Amplifiers

A 2.4 GHz CMOS Power Amplifier with 20 dBm Output Power for Bluetooth and WLAN Applications

This article presents a 2.4 GHz CMOS power amplifier (PA) with an output power of 20 dBm using a 0.25 ┬Ám 1P5M standard CMOS process. The PA uses a diode connected NMOS transistor functioning as a diode linearizer. It is believed that this is the first ...
Due to the fast development of wireless communications, a low cost, high performance, high integration technology is needed for system on a chip (SOC) implementation. The CMOS technology provides a good solution for SOC integration. 1 Recent improvements of the standard CMOS process make it possible to implement RF...
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An RF Module Design for a Multi-mode Handset

This article describes a novel design of an RF module for a multi-mode handset and presents an example of an RF module for a W-CDMA/GSM/DCS tri-band and dual-mode handset. The entire module, including a direct modulation transmitter and a superheterody...
The number of mobile users is predicted to reach 1.7 billion by the year 2010. More than 45 percent of them will use high data speed services. W-CDMA, proposed by IMT2000, has become the most practical and important system for the development of new wireless communications. Nevertheless, second generation...
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A Minimalist Approach to Feedforward Multi-carrier Linear Power Amplifiers

A feedforward multi-carrier linear power amplifier with 60 W maximum average output is featured
Atmospheric propagation attenuation is known to be higher in the 2.1 GHz band than in the cellular band. Thus, to overcome this performance disadvantage and to maximize cell coverage and capacity, Unity Wireless System's first feedforward multi-carrier linear power amplifier (MCLPA) product has been designed with a high 60...
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High Efficiency Class B, E and F Power Amplifiers: The Magic of Parallel Circuits

Modern commercial and military communication systems require high efficiency, long term operating conditions. For this purpose, the power amplifiers, as final and highly current-consuming transmitter elements, are developed using the high efficiency class B, F or E modes of operation, depending on the technical requirements. In class B operation,...
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A Cost-effective 2 W GaAs MMIC Amplifier Solution

GaAs HBT technology has been successfully deployed for low to mid-power MMIC RF amplifiers in recent years. EiC Corp. pioneered the use of an InGaP emitter for RF power amplifiers and first introduced gain block products in 1998. InGaP/GaAs HBT devices have proven to provide better performance and be...
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Effects of AM/AM and AM/PM Distortion on Spectral Regrowth in 3GPP W-CDMA BS Power Amplification

The effects of amplitude and phase nonlinearities in a power amplifier, which lead to spectral regrowth, are examined in the context of a 3GPP W-CDMA forward link (base station) environment. Behavioral modeling and simulation techniques are applied fir...
The transmitter unit, contained in base stations for third generation cellular systems, requires a linear power amplifier to preserve signal integrity when amplifying composite signals associated with multiple channels. While the power amplifier must meet a number of requirements to be system level compliant, the design process generally emphasizes...
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Using Load Pull Analysis and Device Model Validation to Improve MMIC Power Amplifier Design Methodologies

This article describes a methodology for the design of a 2 GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) using a heterojunction bipolar transistor (HBT) process. It is based on the use of modern software tools and advanced loa...
There is certainly no shortage of information about designing power amplifiers these days, and several books address the subject quite admirably. 1-6 However, as well as these books cover the theory and underlying logic of such designs, they do not tell the reader precisely how to do it. As...
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Design Advantages of CDMA Power Amplifiers Built with MOSFET Technology

CDMA power amplifiers are now being produced in volume using MOSFET technology, enabling improvements in amplifier performance and system cost. This article discusses the design characteristics of these very flexible and stable devices and explains how...
Each of the many process technologies that can be used for RF power amplifiers - GaAs HBT, PHEMT, InGaP HBT and silicon RF MOSFET - have different advantages, such as better frequency characteristics, wider linearity and higher power capability. A fundamental comparison of the different process technologies is shown...
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A Highly Linear 17 to 24 GHz SMT Power Amplifier

Introduction to a new surface-mount technology-packaged power amplifier for wireless communications applications
A new surface-mount technology (SMT)-packaged power amplifier has been introduced for wireless communications applications, including millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), satellite communications (SATCOM) and very small aperture terminal (VSAT) use. The model XP1000P1 GaAs MMIC surface-mount power amplifier is a two-stage amplifier optimized for linear output...
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A Broadband Hybrid Solid-state and TWT Amplifier

Development of a broadband microwave amplifier for testing in the 800 MHz to 18 GHz frequency range
Test applications that require microwave power from 1 to 18 GHz are usually addressed by two amplifiers, a solid-state unit to cover the low frequency range and a traveling-wave tube amplifier (TWTA) for the higher range. The input signal must be switched between the two amplifiers and, if there...
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