Amplifiers

IMS2011 Product Wrap Up - MMICs, Materials and More

ADI introduced two 1 W, 2-stage RF driver amplifiers featuring the ability to cover the entire cellular frequency range used in wireless communications systems. The highly-integrated are pin-compatible, easy-to-tune and integrate two stages of gain, thereby saving significant board space when compared to traditional discrete designs. ADI also introduced...
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M/A-COM Tech Solutions Extends Leadership in High Power Semiconductors With New Portfolio of GaN Products

M/A-COM Technology Solutions Inc. extends its leadership position in high power semiconductors with the introduction of a new family of Gallium Nitride (GaN) RF power transistors. This new family of products targets L- and S-band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and...
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Cree To Demonstrate C-Band GaN HEMT MMIC High Power Amplifier for Satellite Communications

Cree Inc. (Booth 1925) will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at IMS 2011 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers. "This is the first GaN MMIC...
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