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Products

Ultra-Broadband Amplifier MMICs

MMIC ImagesCentellax offers a range of ultra-broadband amplifier MMICs and modules DC-65 GHz for RF and microwave communications, test equipment and military systems.  MMICs include 0-30 dB gain control, temperature-reference power detector and low noise option. Visit the Microwave Product Page for more information.


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28 G Quad 2 V EA Optical Modulator Driver SMT

OA3SSQL-E_The Centellax OA3SSQL is a surface-mount, quad channel, high performance, broadband 28 Gb/s electro-absorptive optical modulator driver with low jitter, 2.0 Vp-p amplitude and excellent gain and group delay flatness. The OA3SSQL is intended as a 100 Gb/s Ethernet (25 Gbps x 4) driver for EAMs. It includes single-ended inputs and outputs. Visit the OA3SSQL Product Page for more information.


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Richardson RFPD introduces two ka-band GaN on SiC power amplifiers from TriQuint

Richardson RFPD Inc. announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.


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Monolithic Amplifier: AVM-273HP+

AVM-273HPplusMini-Circuits AVM-273HP+ is a three stage balanced, wideband monolithic amplifier delivering up to 0.5 W power and operating over 13 to 26.5 GHz. It is designed using PHEMT technology and is unconditionally stable. Its outstanding isolation enables it to be used as a wideband isolation amplifier or buffer amplifier in a variety of microwave systems.


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SMP Connector Applications

snap-on connectorThe SMP snap-on connector has become a popular RF connector for use in high density RF system packaging. SHP has developed additional variants of these connectors, which improve their attachment characteristics. Including a robust aluminum compatible connector and a robust kovar compatible connector for solder applications. These connectors provide superior hermetic performance in thermal cyclic environments.


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Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).

 


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Triplexers : TPX978/1030/1090SA

TPX97810301090SARFMW Ltd. announces design and sales support for Sangshin Elecom triplexers targeting avionics applications for Automatic Dependent Surveillance-Broadcast (ADS-B),  Universal Access Transceiver (UAT) and Traffic Collision Avoidance System (TCAS). Sangshin’s TPX978/1030/1090SA  triplexer offers excellent isolation of 45 dB between each band along with only 2.5 dB of insertion loss. 


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Richardson RFPD introduces new wideband 10W SPDT switch from Wavelex

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new wideband, 10W single-pole, double-throw (SPDT) switch from Wavelex.


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L and S-Band High Gain Amplifiers

HighGainAmplifiersPasternack Enterprises Inc. released a new portfolio of L and S-Band high gain amplifiers covering 1.2 to 1.4 GHz and 3.1 to 3.5 GHz specifically used for commercial and military radar applications. These RF amplifiers utilize a hybrid microwave integrated circuit design and advanced GaAs PHEMT technology to produce an unconditionally stable module.


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GaN Amplifier: TGA2237

TGA2237RFMW Ltd. announces design and sales support for TriQuint’s 30 MHz to 2.5 GHz TGA2237 with >52% PAE. The TGA2237 offers 10 W saturated power with 13 dB of large signal gain. P1 dB is rated at >32 dBm with a small signal gain of 19 dB. TriQuint’s TGA2237 operates from a 30 V supply and uses only 360 mA of current.


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