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Products

Digital Attenuators: LDA-102E / LDA-602E

January 9, 2014

LDA-102E and LDA-602EVaunix a manufacturer of USB controlled and powered test equipment, has announced the addition of two new models to its family of LDA series digital attenuators. This product family now offers attenuators with up to 120 dB of programmable attenuation through 6,000 MHz. The LDA-102E and LDA-602E all have input power of up to 2 W.


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TGA2594: High-Power Amplifier

January 9, 2014

TGA2594RFMW Ltd. announces design and sales support forthe TGA2594, a 5 W high-power amplifier developed using TriQuint’s GaN15 technology. Supporting VSAT and SATCOM applications, the TriQuint TGA2594 offers 35 dBm P1 db or 37 dBm Psat from 27 to 31 GHz. Small signal gain is up to 23 dB. 


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DRO-12D3G-CD-1: Dielectrically Stabilized GaAs FET Oscillator

January 8, 2014

DRO-12D3G-DC-1PMI Model No. DRO-12D3G-CD-1 is a dielectrically stabilized GaAs FET oscillator with a center frequency of 12.3 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -75 dBc/Hz.


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DRO-14D3G-CD-1: GaAs FET Oscillator

January 8, 2014

DRO-14D3G-CD-1PMI Model No. DRO-14D3G-CD-1 is a dielectrically stabilized GaAs FET oscillator with a center frequency of 14.3 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -70 dBc/Hz.


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DRO-16D3G-CD-1: Stabilized GaAs FET Oscillator

January 8, 2014

DRO-16D3G-CD-1PMI Model No. DRO-16D3G-CD-1 is a dielectrically stabilized GaAs FET oscillator with a center frequency of 16.3 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -70 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.06" x 1.63" x 0.98".


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P2T-100M40G-95-T-512-292FF: Two Throw Pin Diode Switch

January 8, 2014

P2T-100M40G-95-T-512-292FFPMI Model No. P2T-100M40G-95-T-512-292FF is an absorptive, single pole, two throw pin diode switch that operates over the frequency range of 0.1 to 40.0 GHz.  This model incorporates a TTL compatible driver for easy system integration.


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DRO-7D7G-CD-1: Dielectrically Stabilized GaAs FET Oscillator

January 8, 2014

DRO-7D7G-CD-1PMI Model No. DRO-7D7G-CD-1 is a dielectrically stabilized GaAs FET Oscillator with a center frequency of 7.7 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -80 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.60" x 2.75" x 1.04".


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DRO-9D7G-CD-1: GaAs FET Oscillator

January 8, 2014

DRO-9D7G-CD-1PMI Model No. DRO-9D7G-CD-1 is a dielectrically stabilized GaAs FET Oscillator with a center frequency of 9.7 GHz.  This model provides minimum output power of +11 dBm with all spurs held to -55 dBc and harmonics held to -20 dBc. The mechanical tuning frequency is +/-25 MHz and the unit has a phase noise of -75 dBc/Hz.  The unit requires +15 VDC and 150 mA and measures 1.35" x 1.98" x 1.04".


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T1G2028536 GaN Transistor

January 7, 2014

T1G2028536RFMW Ltd. announces design and sales support for TriQuint’s T1G2028536, a 285 W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure.


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PIQ-2G18G-360-16-CD-1 I/Q Vector Modulator

January 7, 2014

PIQ-2G18G-360-16-CD-1PMI Model No. PIQ-2G18G-360-16-CD-1 is a 2.0 to 18.0 GHz, high performance I/Q Vector Modulator with 2 x 12 bit monotonic TTL compatible channels (I and Q).  This model offers a full 360 degrees of phase shift with a minimum of 16 dB of amplitude control.


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