RFMW Ltd. announces design and sales support for a 5 to 1200 MHz passive, 2-way splitter from MiniRF. The MRFSP5725 provides a low cost, highly reliable solution for broadband CATV designs. Characterized for use in 75 ohm circuits, the MRFSP5725 offers 28 dB of isolation with typical insertion loss of only 0.5 dB. Lead free and RoHs compliant, the MRFSP5725 comes in a surface mountable 0.15 x 0.15 x 0.115" package.
Richardson RFPD Inc. announced today the availability and full design support capabilities for a new low passive mixer from M/A-COM Technology Solutions. The RF, LO and IF frequency ranges are 5 to 35 GHz, 3 to 33 GHz and DC to 4.5 GHz, respectively. The new mixer can be used for lower sideband (LSB) or upper sideband (USB) mixing, and two mixers can be combined in a quadrature configuration for optimal image rejection.
RFMW Ltd. announces design and sales support for the BLF2425M6LS180P, a 180 W LDMOS transistor from NXP covering the industrial, scientific and medical (ISM) band of 2400 to 2500 MHz. The BLF2425M6LS180P has applications from solid state heating to RF plasma lamps to RF plasma torches. The BLF2425M6LS180P offers 13.3 dB of gain and runs off a 28 V supply with efficiencies up to 53.5%.
Anaren Inc.'s Wireless Connectivity Group announced that its Anaren Integrated Radio (AIR) module team has introduced a range of 1.1 updates and improvements to its recently introduced Anaren Atmosphere online development platform. Miscellaneous improvements include added compression to network transmission for reduced file sizes, support of Windows mobile app compilation and enhanced developer tool compatibility with DPI setting changes.
RFMW Ltd. announces design and sales support foran LDMOS power transistor internally matched for broadband operation from 2400 to 2500 MHz. NXP’s BLF2425M7LS140 provides 140 W average CW power with 18.5 dB of gain. The BLF2425M7LS140 draws 1.3 A from a 28 V supply with efficiencies up to 52%. Housed in a ceramic package with solder ears, the BLF2425M7LS140 is a highly rugged transistor for industrial heating applications.
RFMW Ltd. announces design and sales support for the Iso-Attenuator model RFSL2536-A30 from RF Circulator Isolator Inc (RFCI).The RFSL2536-A30 is capable of handling 1000 W peak / 200 W average forward power and 100 W CW reverse power into the on-board, 30 dB attenuator. Spanning 1920 to 2125 MHz, the RFCI RFSL2536-A30 provides >23 dB typical port-to-port isolation while maximum insertion loss is 0.25 dB.
The first Altair HyperWorks Units (HWU) enabled version of FEKO is now available on the Altair website. HWU licensing will allow access to many Altair products, including the powerful HyperMesh pre-processor. FEKO Suite 7.0.2 has major runtime and memory improvements for the Ray-Launching Geometrical Optics (RL-GO) solver. This applies specifically to electrically huge problems.
RFMW Ltd. announces design and sales support for a two-stage wideband power amplifier supporting Test Instrumentation, EW and Radar applications from 2 to 18 GHz. The Qorvo TGA2214 provides 5 W of saturated output power with a large signal gain of >14 dB. Small signal gain is >22 dB. Biased from a 22 V supply, the Qorvo TGA2214 draws 450 mA of current. PAE measures greater than 20 percent.
M/A-COM Technology Solutions Inc. (“MACOM”), has introduced a power amplifier designed specifically for 18 GHz wireless backhaul applications. The MAAP-011145 is a power amplifier covering the 17.6 to 19.75 GHz frequency band in a 7 mm, lead-free, cavity package. This device features a temperature compensated integrated power detector, and includes ESD protection and by-pass capacitors to ease the implementation and volume assembly of the packaged part.
RFMW Ltd. announces design and sales support for NXP’s BLF25M612G LDMOS power transistor offering 12 W average CW output power. The BLF25M612G is designed as a driver amplifier for high power CW applications in the 2400 to 2500 MHz ISM band. Operating from a 28 V supply, efficiency of the BLF25M612G is rated at 58%. Offering a very high gain of 18 dB, this transistor touts excellent ruggedness and thermal stability.