RFMW Ltd. announces design and sales support for a low noise amplifier (LNA) with integrated bypass switch. Operating from 1.5 to 4 GHz, the Qorvo TQL9063 provides 0.7 dB noise figure and up to 19 dB of gain through the amplifier. When gain is not needed, a bypass switch is offered which automatically turns off the LNA for power savings.
Passive Plus Inc. has developed a series of broadband capacitors available in 4 different case sizes; 01005BB, 0201BB, 0402BB, and the 0603BB. Values available are 10nF (103) and 100nF (104). These capacitors are intended primarily for coupling RF signals or, occasionally, for bypassing them to ground, while blocking DC. The applications for which they are intended require small, surface-mountable devices that provide low RF impedances.
Skyworks has broadened its antenna tuner portfolio with two mobile industry processor interface (MIPI®)-controlled devices that support ultra-low Ron (SKY19247-686LF) and ultra-high Vpeak (SKY19237-001). These tuners are ideal for smartphones, data cards and MiFi® hotspots and improve antenna efficiency, as well as total radiated power (TRP) and total isotropic sensitivity (TIS) performance.
RFMW Ltd. announces design and sales support for a 3-stage, high gain amplifier designed for ease-of-use in point to point radio systems. Featuring a frequency range of 9.5 to 12 GHz, the Qorvo TGA2760-SM offers 33 dB of gain from its 3-stage configuration. P1dB is up to 38 dBm while Psat is rated at 42 dBm. The TGA2760-SM is equipped with an integrated power detector and requires no external matching components.
RFMW Ltd. announces design and sales support for a surface mount GaN power amplifier from Qorvo. The Qorvo TGA2975-SM offers 12 W of saturated output power from 2.7 to 3.5 GHz. Small signal gain is >31 dB and input return loss is rated at >9 dB. The TGA2975-SM draws 175 mA from a 20 to 32 V bias supply with >52% power added efficiency (PAE).
Richardson RFPD Inc. announced the availability and design support capabilities for an UltraCMOS® FET driver from Peregrine Semiconductor Corporation. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT gallium nitride FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.
RFMW Ltd. announces design and sales support for a SPDT RF switch spanning a frequency range of 20 MHz to 6 GHz. The Skyworks SKY13587-378LF offers 0.35 dB insertion loss and 24 dB of isolation for transmit/receive applications in 2 G or 5 G WiFi, IoT systems and general purpose switching. Extended temperature range of -40 to +105 degrees C allows the SKY13587-378LF to serve industrial lighting and outdoor applications.
Richardson RFPD, Inc. announced the availability and support capabilities for four GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50 Ω-input matched discrete GaN on SiC HEMT, the QPD1003 is a 500 W (P3dB) internally-matched discrete GaN on SiC HEMT and the 125 W (P3dB) QPD1008L and 65 W (P3dB) QPD1015L are wideband unmatched discrete GaN on SiC HEMTs.
TRAK Microwave has added a X-band Direct Synthesizer / Upconverter to its wide range of product offerings. The SYN152 features four x2, x3, x4, and x17 multiplied output ports with various powers in either the L-, S-, or X-bands as well as a X-band BIT detector. With UHF input power at -6 dBm, this synthesizer can output 0 dBm in the S-band, 2 dBm in the X3 L-band, 4 dBm in the X2 L-band, and 10 dBm in the X-band.
RFMW Ltd. announces design and sales support for a 5 G front end module (FEM). The Qorvo RFFM4554 integrates a high linearity SPDT RF switch with a low noise amplifier (LNA) having bypass capability. The LNA receive gain is 13.5 dB with noise figure rated at a very low, 1.7 dB. With frequency coverage from 4.9 to 5.925 GHz, the Qorvo RFFM4554 supports 5 G WiFi CPEs, gateways and set top boxes.